2SA702NP Datasheet. Specs and Replacement
Type Designator: 2SA702NP 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Package: R145
2SA702NP Substitution
- BJT ⓘ Cross-Reference Search
2SA702NP datasheet
isc Silicon PNP Power Transistor 2SA700 DESCRIPTION High Collector Current -I = -1.5A C Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
Detailed specifications: 2SA698, 2SA699, 2SA699A, 2SA70, 2SA700, 2SA701, 2SA701NP, 2SA702, TIP42C, 2SA703, 2SA704, 2SA706, 2SA706-2, 2SA706-3, 2SA706-4, 2SA707, 2SA708
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