2SA706-2 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA706-2
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 7.9 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 51
Noise Figure, dB: -
Package: TO202
2SA706-2 Transistor Equivalent Substitute - Cross-Reference Search
2SA706-2 Datasheet (PDF)
9.4. Size:194K inchange semiconductor
2sa700.pdf
2sa700.pdf
isc Silicon PNP Power Transistor 2SA700DESCRIPTIONHigh Collector Current -I = -1.5ACCollector-Emitter Breakdown Voltage-: V = -35V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =2
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
