2SA706-4 Datasheet. Specs and Replacement

Type Designator: 2SA706-4  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 7.9 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 120 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 51

Noise Figure, dB: -

Package: TO202

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2SA706-4 datasheet

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isc Silicon PNP Power Transistor 2SA700 DESCRIPTION High Collector Current -I = -1.5A C Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

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Detailed specifications: 2SA701NP, 2SA702, 2SA702NP, 2SA703, 2SA704, 2SA706, 2SA706-2, 2SA706-3, 2SD718, 2SA707, 2SA708, 2SA708A, 2SA709, 2SA71, 2SA710, 2SA711, 2SA712

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