2SA706-4 Datasheet and Replacement

   Type Designator: 2SA706-4
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 7.9 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 120 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 51
   Noise Figure, dB: -
   Package: TO202
      - BJT Cross-Reference Search