2SA713 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA713
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 6000
Noise Figure, dB: -
Package: TO92
2SA713 Transistor Equivalent Substitute - Cross-Reference Search
2SA713 Datasheet (PDF)
2sa719 2sa720.pdf
Transistor2SA719, 2SA720Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC1317 and 2SC13185.0 0.2 4.0 0.2FeaturesComplementary pair with 2SC1317 and 2SC1318.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SA719 30VCBO V+0.2 +0.2base voltage 2SA720 60 0.45
2sa715.pdf
2SA715Silicon PNP EpitaxialApplicationLow frequency power amplifier complementary pair with 2SC1162OutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 5 VCollector current IC 2.5 ACollector
2sa719.pdf
2SA719 -0.5 A, -30 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES For low-frequency power amplification and driver amplification. G HEmitterCollector Base CLASSIFICATION OF hFE JA DProduct-Rank 2SA719-Q 2SA719-R 2SA719-SMillimeterREF.B M
2sa714.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA714 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For power amplifier and power switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UN
2sa715.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION With TO-126 package Complement to type 2SC1162 APPLICATIONS Low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta
2sa719.pdf
2SA719/2SA720(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features For low-frequency power amplification and driver amplification MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 2SA719 -30 V 2SA720 -60 VCEO Collector-Emitter Voltage 2SA719 -25 V 2SA720 -50 Dimensions in inch
2sa715f.pdf
2SA715F(BR3CA715QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F PNP Silicon PNP transistor in a TO-126F Plastic Package. / Features 2SC1162F(BR3DA1162QF) Complementary pair with 2SC1162F(BR3DA1162QF). / Applications Low frequency power amplifier applications.
2sa714.pdf
isc Silicon PNP Power Transistor 2SA714DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
2sa715.pdf
isc Silicon PNP Power Transistor 2SA715DESCRIPTIONGood Linearity of hFECollector-Emitter Breakdown Voltage-V = -35V (Min)(BR)CEOComplement to Type 2SC1162Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
