2SA720 Datasheet. Specs and Replacement
Type Designator: 2SA720 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: TO92
2SA720 Substitution
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2SA720 datasheet
Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC1317 and 2SC1318 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC1317 and 2SC1318. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to 2SA719 30 VCBO V +0.2 +0.2 base voltage 2SA720 60 0.45 ... See More ⇒
2SA720 -0.5 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES For low-frequency power amplification and driver amplification. G H Emitter Collector Base CLASSIFICATION OF hFE J A D Product-Rank 2SA720-Q 2SA720-R 2SA720-S Millimeter REF. B M... See More ⇒
Transistor 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC1318A 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO ... See More ⇒
Detailed specifications: 2SA715B, 2SA715C, 2SA715D, 2SA715WT, 2SA717, 2SA718, 2SA719, 2SA72, 2SC2625, 2SA720A, 2SA721, 2SA722, 2SA723, 2SA724, 2SA725, 2SA726, 2SA728
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