2SA720A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA720A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
2SA720A Transistor Equivalent Substitute - Cross-Reference Search
2SA720A Datasheet (PDF)
2sa720a e.pdf
Transistor2SA720ASilicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC1318A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO
2sa719 2sa720.pdf
Transistor2SA719, 2SA720Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC1317 and 2SC13185.0 0.2 4.0 0.2FeaturesComplementary pair with 2SC1317 and 2SC1318.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SA719 30VCBO V+0.2 +0.2base voltage 2SA720 60 0.45
2sa720.pdf
2SA720 -0.5 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES For low-frequency power amplification and driver amplification. G HEmitterCollector Base CLASSIFICATION OF hFE JA DProduct-Rank 2SA720-Q 2SA720-R 2SA720-SMillimeterREF.B M
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
