2SA726 Datasheet and Replacement
Type Designator: 2SA726
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO92
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2SA726 Datasheet (PDF)
2sa719 2sa720.pdf

Transistor2SA719, 2SA720Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC1317 and 2SC13185.0 0.2 4.0 0.2FeaturesComplementary pair with 2SC1317 and 2SC1318.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SA719 30VCBO V+0.2 +0.2base voltage 2SA720 60 0.45
2sa720a e.pdf

Transistor2SA720ASilicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC1318A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO
2sa727.pdf

2SA727 -3A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TSOP-6 FEATURES AE High current output up to -3A L Low saturation voltage 6 5 4MARKING B7 2 7 1 2 3 = Date Code FC HJD G KPACKAGE INFORMATION Millimeter Millimeter REF. REF. Package MPQ Lea
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CSC1061B | 2SA702NP | 2N3392 | 2SB688O
Keywords - 2SA726 transistor datasheet
2SA726 cross reference
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History: CSC1061B | 2SA702NP | 2N3392 | 2SB688O



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