2SA750 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA750
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 225
Noise Figure, dB: -
Package: TO92
2SA750 Transistor Equivalent Substitute - Cross-Reference Search
2SA750 Datasheet (PDF)
2sa753.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA753 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1343 APPLICATIONS For 100W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL
2sa757.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA757 DESCRIPTION With TO-3 package Complement to type 2SC897 APPLICATIONS For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
2sa755.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA755 DESCRIPTION With TO-220 package Complement to type 2SC1419 Note:Type 2SA754 with short pin APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum
2sa758.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA758 DESCRIPTION With TO-3 package Complement to type 2SC898 APPLICATIONS For 80W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sa756.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA756 DESCRIPTION With TO-3 package Complement to type 2SC1030 APPLICATIONS For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCB
2sa753.pdf
isc Silicon PNP Power Transistor 2SA753DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -110V(Min.)(BR)CEOComplement to Type 2SC1343Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 100W audio amplifier power output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-
2sa757.pdf
isc Silicon PNP Power Transistor 2SA757DESCRIPTIONHigh Power Dissipation-: P = 60W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -90V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier power output stage andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS
2sa755.pdf
isc Silicon PNP Power Transistor 2SA755DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.3V(Max.) @ I = -1.5ACE(sat) CGood Linearity of hFEComplement to Type 2SC1419Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power ampli
2sa758.pdf
isc Silicon PNP Power Transistor 2SA758DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -110V(Min.)(BR)CEOComplement to Type 2SC898Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier power output stage andgeneral purpose applicati
2sa754.pdf
isc Silicon PNP Power Transistor 2SA754DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.3V(Max.) @ I = -1.5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M
2sa756.pdf
isc Silicon PNP Power Transistor 2SA756DESCRIPTIONHigh Power Dissipation-: P = 50W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier power output stage andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
