2SA758 Specs and Replacement
Type Designator: 2SA758
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
2SA758 datasheet
..1. Size:153K jmnic
2sa758.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA758 DESCRIPTION With TO-3 package Complement to type 2SC898 APPLICATIONS For 80W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒
..2. Size:199K inchange semiconductor
2sa758.pdf
isc Silicon PNP Power Transistor 2SA758 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -110V(Min.) (BR)CEO Complement to Type 2SC898 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier power output stage and general purpose applicati... See More ⇒
9.1. Size:153K jmnic
2sa753.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA753 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1343 APPLICATIONS For 100W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL ... See More ⇒
9.2. Size:153K jmnic
2sa757.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA757 DESCRIPTION With TO-3 package Complement to type 2SC897 APPLICATIONS For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO... See More ⇒
9.3. Size:155K jmnic
2sa755.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA755 DESCRIPTION With TO-220 package Complement to type 2SC1419 Note Type 2SA754 with short pin APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ... See More ⇒
9.4. Size:152K jmnic
2sa756.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA756 DESCRIPTION With TO-3 package Complement to type 2SC1030 APPLICATIONS For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCB... See More ⇒
9.5. Size:202K inchange semiconductor
2sa753.pdf
isc Silicon PNP Power Transistor 2SA753 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -110V(Min.) (BR)CEO Complement to Type 2SC1343 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 100W audio amplifier power output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-... See More ⇒
9.6. Size:198K inchange semiconductor
2sa757.pdf
isc Silicon PNP Power Transistor 2SA757 DESCRIPTION High Power Dissipation- P = 60W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -90V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒
9.7. Size:209K inchange semiconductor
2sa755.pdf
isc Silicon PNP Power Transistor 2SA755 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.3V(Max.) @ I = -1.5A CE(sat) C Good Linearity of h FE Complement to Type 2SC1419 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power ampli... See More ⇒
9.8. Size:206K inchange semiconductor
2sa754.pdf
isc Silicon PNP Power Transistor 2SA754 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.3V(Max.) @ I = -1.5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M... See More ⇒
9.9. Size:202K inchange semiconductor
2sa756.pdf
isc Silicon PNP Power Transistor 2SA756 DESCRIPTION High Power Dissipation- P = 50W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: 2SA750, 2SA751, 2SA752, 2SA753, 2SA754, 2SA755, 2SA756, 2SA757, BDT88, 2SA759, 2SA76, 2SA760, 2SA761, 2SA761-1, 2SA761-2, 2SA761S, 2SA762
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