2SA766S Specs and Replacement
Type Designator: 2SA766S
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO66
- BJT ⓘ Cross-Reference Search
2SA766S datasheet
8.2. Size:209K inchange semiconductor
2sa766.pdf 
isc Silicon PNP Power Transistor 2SA766 DESCRIPTION Collector-Base Breakdown Voltage- V = -150V(Min) (BR)CBO High Collector Power Dissipation- Complement to Type 2SC1450 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Line-operated vertical deflection output Medium power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
9.1. Size:69K wingshing
2sa769.pdf
2SA769 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1827 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25 PC 30 W Jun... See More ⇒
9.2. Size:147K jmnic
2sa768.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA768 DESCRIPTION With TO-220 package Complement to type 2SC1826 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER... See More ⇒
9.3. Size:153K jmnic
2sa765.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA765 DESCRIPTION With TO-66 package Low collector saturation voltage APPLICATIONS Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER C... See More ⇒
9.4. Size:147K jmnic
2sa769.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA769 DESCRIPTION With TO-220 package Complement to type 2SC1827 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETE... See More ⇒
9.5. Size:153K jmnic
2sa764.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA764 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2SC1444 APPLICATIONS Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratin... See More ⇒
9.6. Size:216K inchange semiconductor
2sa768.pdf
isc Silicon PNP Power Transistor 2SA768 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60(V)(Min.) (BR)CEO Complement to Type 2SC1826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol... See More ⇒
9.7. Size:207K inchange semiconductor
2sa765.pdf
isc Silicon PNP Power Transistor 2SA765 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 4A CE(sat) C Complement to Type 2SC1445 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplifier applications ABSOLUTE MA... See More ⇒
9.8. Size:180K inchange semiconductor
2sa762.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA762 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -110V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general purpose power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒
9.9. Size:216K inchange semiconductor
2sa769.pdf
isc Silicon PNP Power Transistor 2SA769 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80(V)(Min.) (BR)CEO Complement to Type 2SC1827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol... See More ⇒
9.10. Size:208K inchange semiconductor
2sa764.pdf
isc Silicon PNP Power Transistor 2SA764 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 4A CE(sat) C Complement to Type 2SC1444 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplifier applications ABSOLUTE MA... See More ⇒
Detailed specifications: 2SA761S, 2SA762, 2SA762-1, 2SA762-2, 2SA763, 2SA764, 2SA765, 2SA766, C5198, 2SA767, 2SA768, 2SA769, 2SA77, 2SA770, 2SA771, 2SA772, 2SA772-1
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