2SA776 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA776
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO1
2SA776 Transistor Equivalent Substitute - Cross-Reference Search
2SA776 Datasheet (PDF)
2sa777.pdf
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Transistor2SA777Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC15095.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base vo
2sa777 e.pdf
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Transistor2SA777Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC15095.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base vo
2sa778.pdf
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2SA778(K), 2SA778A(K)Silicon PNP EpitaxialApplicationHigh voltage medium speed switchingOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA778(K), 2SA778A(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA778(K) 2SA778A(K) UnitCollector to base voltage VCBO 150 180 VCollector to emitter voltage VCEO 150 180 VEmitter to base voltage VEBO 5
2sa770 2sa771.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION With TO-220 package Complement to type 2SC1985/1986 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbs
2sa775.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA775 DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV vertical output amplifier applicatons PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND
2sa770 2sa771.pdf
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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa770 2sa771.pdf
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION With TO-220 package Complement to type 2SC1985/1986 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sy
2sa771.pdf
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isc Silicon PNP Power Transistor 2SA771DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -80(V)(Min.)(BR)CEOComplement to Type 2SC1986Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
2sa779.pdf
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA779DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -0.15AFE CCollector-Emitter Sustaining Voltage -: V = -35V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementa
2sa770.pdf
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isc Silicon PNP Power Transistor 2SA770DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -60(V)(Min.)(BR)CEOComplement to Type 2SC1985Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
2sa775.pdf
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isc Silicon PNP Power Transistor 2SA775DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -100V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose output amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .