2SA779 Specs and Replacement
Type Designator: 2SA779
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 55 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126
- BJT ⓘ Cross-Reference Search
2SA779 datasheet
..1. Size:181K inchange semiconductor
2sa779.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA779 DESCRIPTION DC Current Gain- h = 40(Min)@ I = -0.15A FE C Collector-Emitter Sustaining Voltage - V = -35V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementa... See More ⇒
9.1. Size:46K panasonic
2sa777.pdf
Transistor 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC1509 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base vo... See More ⇒
9.2. Size:50K panasonic
2sa777 e.pdf
Transistor 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC1509 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base vo... See More ⇒
9.4. Size:152K jmnic
2sa770 2sa771.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION With TO-220 package Complement to type 2SC1985/1986 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Abs... See More ⇒
9.5. Size:147K jmnic
2sa775.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA775 DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV vertical output amplifier applicatons PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER COND... See More ⇒
9.6. Size:236K sanken-ele
2sa770 2sa771.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
9.7. Size:123K inchange semiconductor
2sa770 2sa771.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION With TO-220 package Complement to type 2SC1985/1986 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sy... See More ⇒
9.8. Size:216K inchange semiconductor
2sa771.pdf
isc Silicon PNP Power Transistor 2SA771 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80(V)(Min.) (BR)CEO Complement to Type 2SC1986 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol... See More ⇒
9.9. Size:216K inchange semiconductor
2sa770.pdf
isc Silicon PNP Power Transistor 2SA770 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60(V)(Min.) (BR)CEO Complement to Type 2SC1985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol... See More ⇒
9.10. Size:201K inchange semiconductor
2sa775.pdf
isc Silicon PNP Power Transistor 2SA775 DESCRIPTION Collector-Emitter Breakdown Voltage V = -100V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose output amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V... See More ⇒
Detailed specifications: 2SA775A, 2SA776, 2SA776A, 2SA777, 2SA778, 2SA778A, 2SA778AK, 2SA778K, S8550, 2SA779K, 2SA78, 2SA780, 2SA780A, 2SA780K, 2SA781, 2SA781K, 2SA782
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