All Transistors. 2SA795B Datasheet

 

2SA795B Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA795B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126

 2SA795B Transistor Equivalent Substitute - Cross-Reference Search

   

2SA795B Datasheet (PDF)

 8.1. Size:201K  inchange semiconductor
2sa795.pdf

2SA795B
2SA795B

isc Silicon PNP Power Transistor 2SA795DESCRIPTIONLarge Collector Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1565Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium Power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.1. Size:204K  1
2sa790 2sa1555.pdf

2SA795B
2SA795B

 9.2. Size:203K  1
2sa790m 2sa1549.pdf

2SA795B
2SA795B

 9.3. Size:257K  rohm
2sa790 2sa791 2sa830 2sa831.pdf

2SA795B

 9.4. Size:101K  panasonic
2sa794.pdf

2SA795B
2SA795B

Power Transistors2SA0794 (2SA794), 2SA0794A (2SA794A)Silicon PNP epitaxial planar typeFor low-frequency output driverUnit: mm8.0+0.50.13.20.2Complementary to 2SC1567, 2SC1567A 3.160.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 Woutput amplifier TO-126B package which requi

 9.5. Size:156K  jmnic
2sa794 2sa794a.pdf

2SA795B
2SA795B

JMnic Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION With TO-126 package Complement to type 2SC1567/1567A High collector-emitter voltage VCEO APPLICATIONS For low frequency output driver Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2

 9.6. Size:183K  inchange semiconductor
2sa794 2sa794a.pdf

2SA795B
2SA795B

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION With TO-126 package Complement to type 2SC1567/1567A High collector-emitter voltage VCEOAPPLICATIONS For low frequency output driver Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;

 9.7. Size:188K  inchange semiconductor
2sa794a.pdf

2SA795B
2SA795B

isc Product Specificationisc Silicon PNP Power Transistor 2SA794ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1567AMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low-frequency high power driver.Optimum for the driver stage of l

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top