All Transistors. 2SA797 Datasheet

 

2SA797 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA797
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 90 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO5

 2SA797 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA797 Datasheet (PDF)

 9.1. Size:204K  1
2sa790 2sa1555.pdf

2SA797
2SA797

 9.2. Size:203K  1
2sa790m 2sa1549.pdf

2SA797
2SA797

 9.3. Size:257K  rohm
2sa790 2sa791 2sa830 2sa831.pdf

2SA797

 9.4. Size:101K  panasonic
2sa794.pdf

2SA797
2SA797

Power Transistors2SA0794 (2SA794), 2SA0794A (2SA794A)Silicon PNP epitaxial planar typeFor low-frequency output driverUnit: mm8.0+0.50.13.20.2Complementary to 2SC1567, 2SC1567A 3.160.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 Woutput amplifier TO-126B package which requi

 9.5. Size:156K  jmnic
2sa794 2sa794a.pdf

2SA797
2SA797

JMnic Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION With TO-126 package Complement to type 2SC1567/1567A High collector-emitter voltage VCEO APPLICATIONS For low frequency output driver Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2

 9.6. Size:183K  inchange semiconductor
2sa794 2sa794a.pdf

2SA797
2SA797

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION With TO-126 package Complement to type 2SC1567/1567A High collector-emitter voltage VCEOAPPLICATIONS For low frequency output driver Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;

 9.7. Size:188K  inchange semiconductor
2sa794a.pdf

2SA797
2SA797

isc Product Specificationisc Silicon PNP Power Transistor 2SA794ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1567AMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low-frequency high power driver.Optimum for the driver stage of l

 9.8. Size:201K  inchange semiconductor
2sa795.pdf

2SA797
2SA797

isc Silicon PNP Power Transistor 2SA795DESCRIPTIONLarge Collector Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1565Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium Power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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