2SA799 Specs and Replacement
Type Designator: 2SA799
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 54
Noise Figure, dB: -
Package: TO39
- BJT ⓘ Cross-Reference Search
2SA799 datasheet
9.4. Size:101K panasonic
2sa794.pdf 
Power Transistors 2SA0794 (2SA794), 2SA0794A (2SA794A) Silicon PNP epitaxial planar type For low-frequency output driver Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SC1567, 2SC1567A 3.16 0.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier TO-126B package which requi... See More ⇒
9.5. Size:156K jmnic
2sa794 2sa794a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION With TO-126 package Complement to type 2SC1567/1567A High collector-emitter voltage VCEO APPLICATIONS For low frequency output driver Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2... See More ⇒
9.6. Size:183K inchange semiconductor
2sa794 2sa794a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION With TO-126 package Complement to type 2SC1567/1567A High collector-emitter voltage VCEO APPLICATIONS For low frequency output driver Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;... See More ⇒
9.7. Size:188K inchange semiconductor
2sa794a.pdf
isc Product Specification isc Silicon PNP Power Transistor 2SA794A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC1567A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency high power driver. Optimum for the driver stage of l... See More ⇒
9.8. Size:201K inchange semiconductor
2sa795.pdf
isc Silicon PNP Power Transistor 2SA795 DESCRIPTION Large Collector Power Dissipation High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC1565 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
Detailed specifications: 2SA794, 2SA794A, 2SA795, 2SA795A, 2SA795B, 2SA796, 2SA797, 2SA798, 13005, 2SA80, 2SA800, 2SA801, 2SA802, 2SA803, 2SA804, 2SA805, 2SA806
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