2SA803 Datasheet and Replacement
Type Designator: 2SA803
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 6.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO106
2SA803 Substitution
2SA803 Datasheet (PDF)
2sa808.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA808 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1619 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBO
2sa807.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA807 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1618 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBO
2sa808.pdf

isc Silicon PNP Power Transistor 2SA808DESCRIPTIONHigh Power Dissipation-: P = 50W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
Datasheet: 2SA796 , 2SA797 , 2SA798 , 2SA799 , 2SA80 , 2SA800 , 2SA801 , 2SA802 , D965 , 2SA804 , 2SA805 , 2SA806 , 2SA807 , 2SA808 , 2SA808A , 2SA809 , 2SA81 .
History: 2SB1417 | BC206 | STBD909 | 2SA743A | NTE302 | 2N3635S | 2SA747
Keywords - 2SA803 transistor datasheet
2SA803 cross reference
2SA803 equivalent finder
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2SA803 replacement
History: 2SB1417 | BC206 | STBD909 | 2SA743A | NTE302 | 2N3635S | 2SA747



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