2SA803 Specs and Replacement
Type Designator: 2SA803
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 6.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO106
2SA803 Substitution
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2SA803 datasheet
JMnic Product Specification Silicon PNP Power Transistors 2SA808 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1619 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBO... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SA807 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1618 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBO... See More ⇒
isc Silicon PNP Power Transistor 2SA808 DESCRIPTION High Power Dissipation- P = 50W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C... See More ⇒
Detailed specifications: 2SA796, 2SA797, 2SA798, 2SA799, 2SA80, 2SA800, 2SA801, 2SA802, NJW0281G, 2SA804, 2SA805, 2SA806, 2SA807, 2SA808, 2SA808A, 2SA809, 2SA81
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