All Transistors. 2SA804 Datasheet

 

2SA804 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA804

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 130 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 6.5 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO106

2SA804 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA804 Datasheet (PDF)

5.1. 2sa807.pdf Size:146K _jmnic

2SA804
2SA804

JMnic Product Specification Silicon PNP Power Transistors 2SA807 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1618 APPLICATIONS ·For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PAR

5.2. 2sa808.pdf Size:145K _jmnic

2SA804
2SA804

JMnic Product Specification Silicon PNP Power Transistors 2SA808 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1619 APPLICATIONS ·For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PAR

5.3. 2sa807.pdf Size:151K _inchange_semiconductor

2SA804
2SA804

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA807 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1618 APPLICATIONS ·For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(T

5.4. 2sa808.pdf Size:49K _inchange_semiconductor

2SA804
2SA804

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA808 DESCRIPTION ·High Power Dissipation- : PC= 50W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collec

Datasheet: 2SA797 , 2SA798 , 2SA799 , 2SA80 , 2SA800 , 2SA801 , 2SA802 , 2SA803 , 2SA1015 , 2SA805 , 2SA806 , 2SA807 , 2SA808 , 2SA808A , 2SA809 , 2SA81 , 2SA810 .

 


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