2SA805 Datasheet and Replacement
Type Designator: 2SA805
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 6.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO106
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2SA805 Datasheet (PDF)
2sa808.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA808 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1619 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBO
2sa807.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA807 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1618 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBO
2sa808.pdf

isc Silicon PNP Power Transistor 2SA808DESCRIPTIONHigh Power Dissipation-: P = 50W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: RN1909 | 3CG6517M | NSVBC856BM3 | MRF5175 | TTC005 | NTE2547 | 2SC3283A
Keywords - 2SA805 transistor datasheet
2SA805 cross reference
2SA805 equivalent finder
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History: RN1909 | 3CG6517M | NSVBC856BM3 | MRF5175 | TTC005 | NTE2547 | 2SC3283A



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