All Transistors. 2SA844F Datasheet

 

2SA844F Datasheet and Replacement


   Type Designator: 2SA844F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200(typ) MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 700
   Noise Figure, dB: -
   Package: TO92
 

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2SA844F Datasheet (PDF)

 8.1. Size:23K  hitachi
 2sa844.pdf pdf_icon

2SA844F

2SA844Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA844Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 55 VEmitter to base voltage VEBO 5 VCollector current IC 100 mAEmitter current IE 100 mACollector p

 8.2. Size:77K  secos
 2sa844.pdf pdf_icon

2SA844F

2SA844 -0.1A , -55V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Low Frequency Amplifier EmitterCollectorBase JCLASSIFICATION OF hFE A DMillimeter REF. Min. Max.Product-Rank 2SA844-C 2SA844-D 2SA844-EA 4.40 4

 9.1. Size:204K  inchange semiconductor
 2sa843.pdf pdf_icon

2SA844F

isc Silicon PNP Power Transistor 2SA843DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 60-200@ I = -0.4AFE CComplement to Type 2SC1683Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2S38 | 2SC4597 | RT3P11M

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