2SA847A Specs and Replacement
Type Designator: 2SA847A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 500
Package: TO92
2SA847A Substitution
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2SA847A datasheet
2SA844 Silicon PNP Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA844 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 55 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Emitter current IE 100 mA Collector p... See More ⇒
2SA844 -0.1A , -55V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Low Frequency Amplifier Emitter Collector Base J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SA844-C 2SA844-D 2SA844-E A 4.40 4... See More ⇒
isc Silicon PNP Power Transistor 2SA843 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 60-200@ I = -0.4A FE C Complement to Type 2SC1683 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: 2SA844C, 2SA844D, 2SA844E, 2SA844F, 2SA845, 2SA845A, 2SA845AH, 2SA845H, BD135, 2SA848, 2SA849, 2SA85, 2SA850, 2SA851, 2SA852, 2SA853, 2SA854
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