All Transistors. 2SA87 Datasheet

 

2SA87 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA87
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.08 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 70 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO44

 2SA87 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA87 Datasheet (PDF)

 0.1. Size:295K  1
2sa874m 2sa1548.pdf

2SA87
2SA87

 0.2. Size:296K  1
2sa874 2sa1559.pdf

2SA87
2SA87

 0.3. Size:49K  panasonic
2sa879 e.pdf

2SA87
2SA87

Transistor2SA879Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC15735.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to base voltage VCBO 250 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO

 0.4. Size:37K  hitachi
2sa872.pdf

2SA87
2SA87

2SA872, 2SA872ASilicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC1775/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA872, 2SA872AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SA872 2SA872A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to base

 0.5. Size:148K  jmnic
2sa877 2sa878.pdf

2SA87
2SA87

JMnic Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute

 0.6. Size:193K  inchange semiconductor
2sa877.pdf

2SA87
2SA87

isc Silicon PNP Power Transistor 2SA877DESCRIPTIONHigh Power Dissipation-: P = 100W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 0.7. Size:190K  inchange semiconductor
2sa877 2sa878.pdf

2SA87
2SA87

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 Co

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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