2SA896-2 Specs and Replacement
Type Designator: 2SA896-2
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 175 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 57
Package: TO92
2SA896-2 Substitution
- BJT ⓘ Cross-Reference Search
2SA896-2 datasheet
2SA893, 2SA893A Silicon PNP Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SC1890/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA893, 2SA893A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA893 2SA893A Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to b... See More ⇒
Detailed specifications: 2SA893C, 2SA893D, 2SA893E, 2SA893F, 2SA894, 2SA895, 2SA896, 2SA896-1, 13007, 2SA897, 2SA898, 2SA899, 2SA90, 2SA900, 2SA901, 2SA902, 2SA903
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