2SA897 Transistor. Datasheet pdf. Equivalent
Type Designator: 2SA897
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.95 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 55 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO202
2SA897 Transistor Equivalent Substitute - Cross-Reference Search
2SA897 Datasheet PDF:
5.1. 2sa893.pdf 
Size:24K _hitachi
2SA893, 2SA893A Silicon PNP Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SC1890/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA893, 2SA893A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA893 2SA893A Unit Collector to base voltage VCBO –90 –120 V Collector to emitter voltage VCEO –90 –120 V Emitter to base voltage VEBO
Datasheet: 2SA893D , 2SA893E , 2SA893F , 2SA894 , 2SA895 , 2SA896 , 2SA896-1 , 2SA896-2 , 2SC945 , 2SA898 , 2SA899 , 2SA90 , 2SA900 , 2SA901 , 2SA902 , 2SA903 , 2SA904 .
