2SA897 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA897
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.95 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 55 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO202
2SA897 Transistor Equivalent Substitute - Cross-Reference Search
2SA897 Datasheet (PDF)
9.1. Size:24K hitachi
2sa893.pdf
2sa893.pdf
2SA893, 2SA893ASilicon PNP EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SC1890/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA893, 2SA893AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SA893 2SA893A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to b
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
