2SA899 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA899
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO126
2SA899 Transistor Equivalent Substitute - Cross-Reference Search
2SA899 Datasheet (PDF)
9.1. Size:24K hitachi
2sa893.pdf
2sa893.pdf
2SA893, 2SA893ASilicon PNP EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SC1890/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA893, 2SA893AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SA893 2SA893A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to b
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SB200
