All Transistors. 2SA899 Datasheet

 

2SA899 Datasheet and Replacement


   Type Designator: 2SA899
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO126
 

 2SA899 Substitution

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2SA899 Datasheet (PDF)

 9.1. Size:24K  hitachi
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2SA899

2SA893, 2SA893ASilicon PNP EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SC1890/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA893, 2SA893AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SA893 2SA893A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to b

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

Keywords - 2SA899 transistor datasheet

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