2SA905 Datasheet and Replacement

   Type Designator: 2SA905
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO92

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2SA905 Datasheet (PDF)

..1. Size:41K no
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9.1. Size:39K no
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9.2. Size:32K no
2sa907.pdf pdf_icon

9.3. Size:154K jmnic
2sa900.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA900 DESCRIPTION With TO-126 package Complement to type 2SC1568 Low collector saturation voltage APPLICATIONS For audio frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

9.4. Size:148K jmnic
2sa907 2sa908 2sa909.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION With TO-3 package Complement to type 2SC1584/1585/1586 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CO

9.5. Size:74K usha
2sa9012.pdf pdf_icon

Transistors2SA9012

9.6. Size:86K usha
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Transistors2SA9015

9.7. Size:217K inchange semiconductor
2sa900.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA900DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -18V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageComplement to Type 2SC1568Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATI

9.8. Size:195K inchange semiconductor
2sa907 2sa908 2sa909.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION With TO-3 package Complement to type 2SC1584/1585/1586 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SY

9.9. Size:194K inchange semiconductor
2sa908.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA908DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOComplement to Type 2SC1585Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(

9.10. Size:194K inchange semiconductor
2sa907.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA907DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOComplement to Type 2SC1584Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(

9.11. Size:194K inchange semiconductor
2sa909.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA909DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOComplement to Type 2SC1586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .