2SA907 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA907
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
2SA907 Transistor Equivalent Substitute - Cross-Reference Search
2SA907 Datasheet (PDF)
2sa907 2sa908 2sa909.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION With TO-3 package Complement to type 2SC1584/1585/1586 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CO
2sa907 2sa908 2sa909.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION With TO-3 package Complement to type 2SC1584/1585/1586 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SY
2sa907.pdf
isc Silicon PNP Power Transistor 2SA907DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOComplement to Type 2SC1584Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(
2sa900.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA900 DESCRIPTION With TO-126 package Complement to type 2SC1568 Low collector saturation voltage APPLICATIONS For audio frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U
2sa900.pdf
isc Silicon PNP Power Transistor 2SA900DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -18V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageComplement to Type 2SC1568Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATI
2sa908.pdf
isc Silicon PNP Power Transistor 2SA908DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOComplement to Type 2SC1585Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(
2sa909.pdf
isc Silicon PNP Power Transistor 2SA909DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOComplement to Type 2SC1586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(
Datasheet: 2SA900 , 2SA901 , 2SA902 , 2SA903 , 2SA904 , 2SA904A , 2SA905 , 2SA906 , BC548 , 2SA908 , 2SA909 , 2SA911 , 2SA912 , 2SA913 , 2SA913A , 2SA914 , 2SA915 .
