All Transistors. 2SA912 Datasheet

 

2SA912 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA912
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO92

 2SA912 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA912 Datasheet (PDF)

 9.1. Size:168K  nec
2sa916.pdf

2SA912
2SA912

 9.2. Size:170K  nec
2sa915.pdf

2SA912
2SA912

 9.3. Size:111K  panasonic
2sa913.pdf

2SA912
2SA912

 9.4. Size:78K  panasonic
2sa914 2sc1953 2sa914.pdf

2SA912
2SA912

 9.5. Size:105K  jmnic
2sa914.pdf

2SA912
2SA912

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA914 DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEO APPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CON

 9.6. Size:125K  jmnic
2sa913 2sa913a.pdf

2SA912
2SA912

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseFig.1 simplified outline (TO-220) and sy

 9.7. Size:177K  inchange semiconductor
2sa914.pdf

2SA912
2SA912

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA914 DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEOAPPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAM

 9.8. Size:205K  inchange semiconductor
2sa913.pdf

2SA912
2SA912

isc Silicon PNP Power Transistor 2SA913DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEOComplement to Type 2SC1913Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power dirver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -1

 9.9. Size:139K  inchange semiconductor
2sa913 2sa913a.pdf

2SA912
2SA912

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and s

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top