All Transistors. 2SA916 Datasheet

 

2SA916 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA916
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SP8

 2SA916 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA916 Datasheet (PDF)

 ..1. Size:168K  nec
2sa916.pdf

2SA916
2SA916

 9.1. Size:170K  nec
2sa915.pdf

2SA916
2SA916

 9.2. Size:111K  panasonic
2sa913.pdf

2SA916
2SA916

 9.3. Size:78K  panasonic
2sa914 2sc1953 2sa914.pdf

2SA916
2SA916

 9.4. Size:105K  jmnic
2sa914.pdf

2SA916
2SA916

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA914 DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEO APPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CON

 9.5. Size:125K  jmnic
2sa913 2sa913a.pdf

2SA916
2SA916

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseFig.1 simplified outline (TO-220) and sy

 9.6. Size:177K  inchange semiconductor
2sa914.pdf

2SA916
2SA916

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA914 DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEOAPPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAM

 9.7. Size:205K  inchange semiconductor
2sa913.pdf

2SA916
2SA916

isc Silicon PNP Power Transistor 2SA913DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEOComplement to Type 2SC1913Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power dirver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -1

 9.8. Size:139K  inchange semiconductor
2sa913 2sa913a.pdf

2SA916
2SA916

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and s

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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