2SA949Y Datasheet and Replacement

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SA940 TRANSISTOR (PNP) TO-220-3L1. BASE FEATURES 2. COLLECTOR Wide Safe Operating Area. 3. EMITTER Complementary to 2SC2703 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value UnitVCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -15

JMnic Product Specification Silicon PNP Power Transistors 2SA940 DESCRIPTION With TO-220 package Complement to type 2SC2073 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Col

2SA940(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide safe Operating Area. Complementary to 2SC2703 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Paramenter Value UnitsVCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Co

2SA940A(3CA940A) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. : 2SC2073A(3DA2073A) Features: Complementary to 2SC2073A(3DA2073A). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -150 V CBO V -1

2SA940(3CA940) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. : 2SC2073(3DA2073) Features: Complementary to 2SC2073(3DA2073). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -150 V CBO V -150 V

2SA940PNP / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1Base PIN 2Collector 1 2SC2073 2 3 PIN 3Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical ou

2SA940Silicon PNP transistor / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1Base PIN 2Collector 1 2SC2073 2 3PIN 3Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical outpu

2SA940T1TLSilicon PNP Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplement to Type 2SC2073APPLICATIONSDesigned for use in general purpose power amplifier ,vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA940DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplement to Type 2SC2073APPLICATIONSDesigned for use in general purpose power amplifier ,vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon PNP Power Transistor 2SA940DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplement to Type 2SC2073Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier ,vertical output applications.ABSOLUTE