All Transistors. 2SA954 Datasheet

 

2SA954 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA954
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO92

 2SA954 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA954 Datasheet (PDF)

 ..1. Size:161K  nec
2sa954.pdf

2SA954 2SA954

 9.1. Size:192K  toshiba
2sa950.pdf

2SA954 2SA954

2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE 1 W output applications Complementary to 2SC2120 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO

 9.2. Size:159K  nec
2sa953.pdf

2SA954 2SA954

 9.3. Size:180K  nec
2sa952.pdf

2SA954 2SA954

 9.4. Size:256K  mcc
2sa950-o-y.pdf

2SA954 2SA954

MCCTM Micro Commercial Components2SA950-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA950-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant.

 9.5. Size:40K  no
2sa957.pdf

2SA954

 9.6. Size:338K  secos
2sa950.pdf

2SA954 2SA954

2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES 1W output applications G H Complementary to 2SC2120 EmitterCollectorBase JCLASSIFICATION OF hFE (1) A DMillimeterREF. Min. Max.Product-Rank 2SA950-O 2SA950-YA 4.40 4.70

 9.7. Size:500K  jiangsu
2sa950.pdf

2SA954 2SA954

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SA950 TRANSISTOR (PNP)TO-92 FEATURES 1W Output Applications1.EMITTER Complementary to 2SC21202. COLLECTOR3. BASE Equivalent Circuit A950=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

 9.8. Size:149K  jmnic
2sa959.pdf

2SA954 2SA954

JMnic Product Specification Silicon PNP Power Transistors 2SA959 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Coll

 9.9. Size:152K  jmnic
2sa957 2sa958.pdf

2SA954 2SA954

JMnic Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION With TO-220 package High breakdown voltage High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SY

 9.10. Size:188K  lge
2sa950.pdf

2SA954 2SA954

2SA950(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features 1W output applications complementary to 2SC2120 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Collecto

 9.11. Size:809K  blue-rocket-elect
2sa953m.pdf

2SA954 2SA954

2SA953M(BR3CG953M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,h ,V FE CEOHigh total power dissipation, high hFE and high VCEO. / Applications Audio frequency amplifier and d

 9.12. Size:193K  inchange semiconductor
2sa959.pdf

2SA954 2SA954

isc Silicon PNP Power Transistor 2SA959DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VC

 9.13. Size:199K  inchange semiconductor
2sa957.pdf

2SA954 2SA954

isc Silicon PNP Power Transistor 2SA957DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -150 VCB

 9.14. Size:126K  inchange semiconductor
2sa957 2sa958.pdf

2SA954 2SA954

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION With TO-220 package High breakdown voltage High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin

 9.15. Size:199K  inchange semiconductor
2sa958.pdf

2SA954 2SA954

isc Silicon PNP Power Transistor 2SA958DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -200V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -200 VCBOV Collector-Emitter Volt

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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