2SA954 Specs and Replacement
Type Designator: 2SA954
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2SA954 datasheet
9.1. Size:192K toshiba
2sa950.pdf 
2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 Audio Power Amplifier Applications Unit mm High hFE h = 100 320 FE 1 W output applications Complementary to 2SC2120 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO ... See More ⇒
9.4. Size:256K mcc
2sa950-o-y.pdf
MCC TM Micro Commercial Components 2SA950-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA950-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant.... See More ⇒
9.6. Size:338K secos
2sa950.pdf
2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES 1W output applications G H Complementary to 2SC2120 Emitter Collector Base J CLASSIFICATION OF hFE (1) A D Millimeter REF. Min. Max. Product-Rank 2SA950-O 2SA950-Y A 4.40 4.70... See More ⇒
9.7. Size:500K jiangsu
2sa950.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR (PNP) TO-92 FEATURES 1W Output Applications 1.EMITTER Complementary to 2SC2120 2. COLLECTOR 3. BASE Equivalent Circuit A950=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code ... See More ⇒
9.8. Size:149K jmnic
2sa959.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA959 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll... See More ⇒
9.9. Size:152K jmnic
2sa957 2sa958.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION With TO-220 package High breakdown voltage High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SY... See More ⇒
9.10. Size:188K lge
2sa950.pdf
2SA950(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features 1W output applications complementary to 2SC2120 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collecto... See More ⇒
9.11. Size:809K blue-rocket-elect
2sa953m.pdf
2SA953M(BR3CG953M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,h ,V FE CEO High total power dissipation, high hFE and high VCEO. / Applications Audio frequency amplifier and d... See More ⇒
9.12. Size:193K inchange semiconductor
2sa959.pdf
isc Silicon PNP Power Transistor 2SA959 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100 V C... See More ⇒
9.13. Size:199K inchange semiconductor
2sa957.pdf
isc Silicon PNP Power Transistor 2SA957 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -150 V CB... See More ⇒
9.14. Size:126K inchange semiconductor
2sa957 2sa958.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION With TO-220 package High breakdown voltage High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratin... See More ⇒
9.15. Size:199K inchange semiconductor
2sa958.pdf
isc Silicon PNP Power Transistor 2SA958 DESCRIPTION Collector-Emitter Breakdown Voltage V = -200V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -200 V CBO V Collector-Emitter Volt... See More ⇒
Detailed specifications: 2SA949Y, 2SA95, 2SA950, 2SA950O, 2SA950Y, 2SA951, 2SA952, 2SA953, BDT88, 2SA956, 2SA956H3, 2SA956H4, 2SA956H5, 2SA956H6, 2SA957, 2SA958, 2SA959
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