2SA971 Specs and Replacement
Type Designator: 2SA971
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 270 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
2SA971 Substitution
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2SA971 datasheet
JMnic Product Specification Silicon PNP Power Transistors 2SA971 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll... See More ⇒
isc Silicon PNP Power Transistor 2SA971 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -150 V C... See More ⇒
2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Amplifier Applications Unit mm Low noise NF = 3dB (typ.) RG = 100 , V = -6 V, I = -100 A, CE C f = 1 kHz NF = 0.5dB (typ.) R = 1 k , V = -6 V, I = -100 A, G CE C f = 1 kHz High DC current gain h = 200 700 FE High breakdown voltage V = -120 V CEO ... See More ⇒
Detailed specifications: 2SA968, 2SA968A, 2SA968B, 2SA969, 2SA97, 2SA970, 2SA970BL, 2SA970GR, TIP31C, 2SA972, 2SA973, 2SA977, 2SA978, 2SA979, 2SA98, 2SA980, 2SA981
Keywords - 2SA971 pdf specs
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