2SAB26 Datasheet and Replacement

   Type Designator: 2SAB26
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 32 V
   Maximum Collector-Emitter Voltage |Vce|: 28 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 34
   Noise Figure, dB: -
   Package: TO3
     - BJT ⓘ Cross-Reference Search