2SB1011 Specs and Replacement
Type Designator: 2SB1011
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: TO126
- BJT ⓘ Cross-Reference Search
2SB1011 datasheet
..1. Size:87K panasonic
2sb1011.pdf 
Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification Unit mm 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Absolute Maximu... See More ⇒
8.1. Size:166K toshiba
2sb1015a.pdf
2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit mm Low collector saturation voltage VCE (sat) = -1.7 V (max) (I = -3 A, I = -0.3 A) C B Collector power dissipation P = 25 W (Tc = 25 C) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -60... See More ⇒
8.6. Size:63K utc
2sb1017.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1017L-... See More ⇒
8.7. Size:33K hitachi
2sb1012.pdf
2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 5 k 1 k 2 3 (Typ) (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base... See More ⇒
8.11. Size:204K jmnic
2sb1015.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION With TO-220Fa package Collector power dissipation PC=25W@TC=25 Low collector saturation voltage Complement to type 2SD1406 APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) ... See More ⇒
8.12. Size:208K jmnic
2sb1017.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION With TO-220Fa package Complement to type 2SD1408 APPLICATIONS For power amplifications Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL... See More ⇒
8.13. Size:213K jmnic
2sb1016.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION With TO-220Fa package High breakdown voltage Low collector saturation voltage Complement to type 2SD1407 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co... See More ⇒
8.14. Size:208K jmnic
2sb1018.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION With TO-220F package High collector current Low collector saturation voltage Complement to type 2SD1411 APPLICATIONS Power amplifier applications High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base... See More ⇒
8.16. Size:216K inchange semiconductor
2sb1015.pdf
isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION Low Collector Saturation Voltage- V = -1.7 V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1406 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
8.17. Size:217K inchange semiconductor
2sb1017.pdf
isc Silicon PNP Power Transistor 2SB1017 DESCRIPTION Low Collector Saturation Voltage- V = -1.7V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1408 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 20 25W high-fidelity audio frequency amplifie... See More ⇒
8.18. Size:217K inchange semiconductor
2sb1016.pdf
isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION Low Collector Saturation Voltage- V = -2.0 V(Max)@I = -4A CE(sat) C Good Linearity of h FE Complement to Type 2SD1407 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
8.19. Size:213K inchange semiconductor
2sb1018.pdf
isc Silicon PNP Power Transistor 2SB1018 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -4A CE(sat) C High Current Capability- I = -7A C Complement to Type 2SD1411 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(... See More ⇒
8.20. Size:216K inchange semiconductor
2sb1019.pdf
isc Silicon PNP Power Transistor 2SB1019 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max)@I = -4A CE(sat) C Good Linearity of h FE Complement to Type 2SD1412 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
8.21. Size:213K inchange semiconductor
2sb1018a.pdf
isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -4A CE(sat) C High Current Capability- I = -7A C Complement to Type 2SD1411A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATING... See More ⇒
Detailed specifications: 2SB1003, 2SB1004, 2SB1005, 2SB1007, 2SB1008, 2SB1009, 2SB101, 2SB1010, BD139, 2SB1012, 2SB1012K, 2SB1013, 2SB1014, 2SB1015, 2SB1015O, 2SB1015Y, 2SB1016
Keywords - 2SB1011 pdf specs
2SB1011 cross reference
2SB1011 equivalent finder
2SB1011 pdf lookup
2SB1011 substitution
2SB1011 replacement
