2SB1016R Specs and Replacement
Type Designator: 2SB1016R
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 270 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
2SB1016R Substitution
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2SB1016R datasheet
JMnic Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION With TO-220Fa package High breakdown voltage Low collector saturation voltage Complement to type 2SD1407 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co... See More ⇒
isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION Low Collector Saturation Voltage- V = -2.0 V(Max)@I = -4A CE(sat) C Good Linearity of h FE Complement to Type 2SD1407 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: 2SB1012K, 2SB1013, 2SB1014, 2SB1015, 2SB1015O, 2SB1015Y, 2SB1016, 2SB1016O, C5198, 2SB1016Y, 2SB1017, 2SB1017O, 2SB1017R, 2SB1017Y, 2SB1018, 2SB1018O, 2SB1018Y
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