2SB1016Y pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SB1016Y Specs and Replacement

Type Designator: 2SB1016Y

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 270 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO220

2SB1016Y Substitution

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2SB1016Y datasheet

7.1. Size:168K toshiba

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7.2. Size:69K wingshing

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7.3. Size:213K jmnic

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JMnic Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION With TO-220Fa package High breakdown voltage Low collector saturation voltage Complement to type 2SD1407 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co... See More ⇒

7.4. Size:217K inchange semiconductor

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isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION Low Collector Saturation Voltage- V = -2.0 V(Max)@I = -4A CE(sat) C Good Linearity of h FE Complement to Type 2SD1407 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

Detailed specifications: 2SB1013, 2SB1014, 2SB1015, 2SB1015O, 2SB1015Y, 2SB1016, 2SB1016O, 2SB1016R, BC337, 2SB1017, 2SB1017O, 2SB1017R, 2SB1017Y, 2SB1018, 2SB1018O, 2SB1018Y, 2SB1019