All Transistors. 2SB1041 Datasheet

 

2SB1041 Datasheet and Replacement


   Type Designator: 2SB1041
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO92
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2SB1041 Datasheet (PDF)

 8.1. Size:31K  hitachi
 2sb1048.pdf pdf_icon

2SB1041

2SB1048Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineUPAK12 2,43141. Base2. Collector3. Emitter4. Collector (Flange)32SB1048Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 1 A

 8.2. Size:47K  hitachi
 2sb1046.pdf pdf_icon

2SB1041

 8.3. Size:873K  kexin
 2sb1048.pdf pdf_icon

2SB1041

SMD Type TransistorsPNP Transistors2SB1048SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-60V High gain amplifier0.42 0.10.46 0.1C1.Base2.CollectorB3.EmitterE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage V

 8.4. Size:343K  kexin
 2sb1046.pdf pdf_icon

2SB1041

SMD Type TransistorsPNP Transistors2SB1046SOT-89Unit:mm Features1.70 0.1 Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-160V Complementary to 2SD14640.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage V

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Keywords - 2SB1041 transistor datasheet

 2SB1041 cross reference
 2SB1041 equivalent finder
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