2N1482 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1482
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO8
2N1482 Transistor Equivalent Substitute - Cross-Reference Search
2N1482 Datasheet (PDF)
9.10. Size:52K microsemi
2n1487 2n1488 2n1489 2n1490.pdf
2n1487 2n1488 2n1489 2n1490.pdf
TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/208 Devices Qualified Level 2N1487 2N1488 2N1489 2N1490 MAXIMUM RATINGS Ratings Symbol 2N1487 2N1488 Unit 2N1498 2N1490 Collector-Emitter Voltage 40 55 Vdc VCEO Collector-Base Voltage 60 100 Vdc VCBO Collector-Emitter Voltage 60 100 Vdc VCEX Emitter-Base Voltage 10 Vdc VEBO Base Current
Datasheet: 2N1475 , 2N1476 , 2N1477 , 2N1478 , 2N1479 , 2N148 , 2N1480 , 2N1481 , 13009 , 2N1483 , 2N1483A , 2N1484 , 2N1484A , 2N1485 , 2N1485A , 2N1486 , 2N1486A .
