2SB1048 Datasheet and Replacement

2SB1048Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineUPAK12 2,43141. Base2. Collector3. Emitter4. Collector (Flange)32SB1048Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 1 A

SMD Type TransistorsPNP Transistors2SB1048SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-60V High gain amplifier0.42 0.10.46 0.1C1.Base2.CollectorB3.EmitterE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage V

SMD Type TransistorsPNP Transistors2SB1046SOT-89Unit:mm Features1.70 0.1 Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-160V Complementary to 2SD14640.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage V

Transistor2SB1030, 2SB1030ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD1423 and 2SD1423A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SB1030 30VCBO V1 2 3base voltage 2SB1030A 60Co

2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm Low collector saturation voltage: VCE (sat) = -1.7 V (max) (I = -3 A, I = -0.3 A) C B Collector power dissipation: P = 25 W (Tc = 25C) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -60

2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power) 2SB1020A High-Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) (VCE = -3 V, IC = -3 A) Low saturation voltage: VCE (sat) = -1.5 V (max) (IC = -3 A) Complementary to 2SD1415A Absolute Maximum Ratings (Tc = 25C)

Ordering number:EN1256C PNP/NPN Planar Silicon Transistors2SB1037/2SD1459Color TV Vertical Output, Sound OutputApplicationsFeatures Package Dimensions High allowable collector dissipation (PC=2W).unit:mm Wide ASO.2010C[2SB1037/2SD1459]JEDEC : TO-220AB 1 : Base( ) : 2SB1037EIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETSILICON POWER TRANSISTOR2SB1094PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERFEATURES PACKAGE DRAWING (UNIT: mm) The 2SB1094 features ratings covering a wide range ofapplications and is ideal for power supplies or a variety of drivesin audio and other equipment.:VCEO -60 V, VEBO -7.0 V, IC(DC) -3.0 A Mold package that does not r

DATA SHEETSILICON POWER TRANSISTOR2SB1097PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Mold package that does not require an insulating board orinsulation bushing Large current capacity in small dimension: IC(DC) = 7 A Low collector saturation voltage: VCE(sat) = -0.5 V MAX. (@ -5 A)

MCCMicro Commercial ComponentsTM 2SB1073-Q20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1073-RPhone: (818) 701-4933Fax: (818) 701-4939Features Low collector to emitter saturation voltage VCE(sat) Silicon Large peak collector current ICP PNP epitaxial planer Mini power type package Lead Free Finish/RoHS Compliant ("P" Suffix desi

Transistor2SB1030, 2SB1030ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD1423 and 2SD1423A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SB1030 30VCBO V1 2 3base voltage 2SB1030A 60Co

Power Transistors2SB1071, 2SB1071ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mm10.00.2 4.20.25.50.2 2.70.2 Features Low collector-emitter saturation voltage VCE(sat) 3.10.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings TC = 25C 1.30.21.40.1Pa

Power Transistors2SB1011Silicon PNP triple diffusion planar typeFor low-frequency output amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Absolute Maximu

Transistor2SB1030, 2SB1030ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD1423 and 2SD1423A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SB1030 30VCBO V1 2 3base voltage 2SB1030A 60Co

Transistor2SB1050Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Low collector to emitter saturation voltage VCE(sat).Large collector current IC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolut

Power Transistors2SB1054Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mm15.00.3 5.00.2Complementary to 2SD148511.00.2 (3.2) Features 3.20.1 Excellent collector current IC characteristics of forward currenttransfer ratio hFE Wide safe operation area High transition frequency fT 2.00.2 2.00.1 Full-pack package wh

Transistor2SB1036Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V1.27 1.27Collector to emitter voltag

Transistor2SB1073Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large peak collector current ICP. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4

Power Transistors2SB1070, 2SB1070ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mm8.50.2 3.40.36.00.2 1.00.1 Features Low collector-emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the0 to 0.4printed circuit board, etc. of small electronic equipmentR = 0.50.

Transistor2SB1050Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Low collector to emitter saturation voltage VCE(sat).Large collector current IC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolut

Transistor2SB1036Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V1.27 1.27Collector to emitter voltag

Transistor2SB1073Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large peak collector current ICP. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4

UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SB1017L-

2SB1025Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1418OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1025Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 5 V

2SB1027Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1027Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5 VCollector current IC 1.5 ACollector peak

2SB1059Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1490OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SB1059Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6 VCollector current IC

2SB1091Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 3.5 k23(Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 8 ACol

2SB1028Silicon PNP EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1028Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 160 VEmitter to base voltage VEBO 5 VCollector current IC 1.5 ACollecto

2SB1032(K)Silicon PNP Triple DiffusedApplicationPower switching complementary pair with 2SD1436(K)OutlineTO-3P211. BaseID2. Collector(Flange)3. Emitter 1.0 k 200 (Typ) (Typ)13232SB1032(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base

2SB1002Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1368OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1002Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6 V

2SB1078(K) PCB242SB1078(K)Silicon PNP EpitaxialApplicationLow frequency power amplifierOutlineAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCollector current IC 8 ACollector

2SB1079Silicon PNP Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SD1559OutlineTO-3P211. Base2. Collector(Flange)3. Emitter 1 k 400 (Typ) (Typ)13232SB1079Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 100 VEmitter to base

2SB1001Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1367OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1001Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 16 VEmitter to base voltage VEBO 6 V

2SB1026Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1419OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1026Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 100 VEmitter to base voltage VEBO 5 V

2SB1012(K)Silicon PNP EpitaxialApplicationLow frequency power amplifier complementary pair with 2SD1376(K)OutlineTO-126 MOD231. EmitterID2. Collector3. Base15 k 1 k23(Typ) (Typ)12SB1012(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base

2SB1072(L), 2SB1072(S)Silicon PNP Triple DiffusedApplicationMedium speed power amplifierOutlineDPAK42, 44112ID1. Base3 2. Collector3. EmitterS Type 12 3 k 0.4 k4. Collector3(Typ) (Typ)L Type 32SB1072(L), 2SB1072(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 100 VCollector to emitter volt

2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Low Collector Saturation Voltage High DC Current Gain EmitterCollector High Collector Power Dissipation Base J Complementary of the 2SD1513 A DMillimeter REF.Min

2SB1033 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD1437ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 40 W Ju

2SB1016 PNP EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SD1407ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1073 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Large peak collector current IC 2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 Symbol Parameter Value UnitVCBO -30 VCollector-Base V

JMnic Product Specification Silicon PNP Power Transistors 2SB1033 DESCRIPTION With TO-220 package Complement to type 2SD1437 APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMET

JMnic Product Specification Silicon PNP Power Transistors 2SB1075 DESCRIPTION With TO-126 package High collector-peak current Low collector saturation voltage APPLICATIONS For audio frequency output amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1009 DESCRIPTION With TO-126 package Complement to type 2SD1380 APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collec

JMnic Product Specification Silicon PNP Power Transistors 2SB1094 DESCRIPTION With TO-220Fa package Complement to type 2SD1585 APPLICATIONS Ideal for power supplies or variety or in audio and other equipment PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

JMnic Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbo

JMnic Product Specification Silicon PNP Power Transistors 2SB1024 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1414 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbo

JMnic Product Specification Silicon PNP Power Transistors 2SB1085 DESCRIPTION With TO-220 package Complement to type 2SD1562 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute ma

JMnic Product Specification Silicon PNP Power Transistors 2SB1098 DESCRIPTION With TO-220F package Complement to type 2SD1589 DARLINGTON High DC current gain APPLICATIONS Low speed switching industrial use Low frequency power amplifier PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 BaseAbsolute maximum ratin

JMnic Product Specification Silicon PNP Power Transistors 2SB1034 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain DARLINGTON APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS V

JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION With TO-220Fa package Collector power dissipation :PC=25W@TC=25 Low collector saturation voltage Complement to type 2SD1406 APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25)

JMnic Product Specification Silicon PNP Power Transistors 2SB1023 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1413 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbo

JMnic Product Specification Silicon PNP Power Transistors 2SB1063 DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-b

JMnic Product Specification Silicon PNP Power Transistors 2SB1052 DESCRIPTION With TO-220Fa package Complement to type 2SD1480 Low collector saturation voltage APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

JMnic Product Specification Silicon PNP Power Transistors 2SB1086 DESCRIPTION With TO-126 package Complement to type 2SD1563 Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maxi

JMnic Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SB1071 -40VCBO C

JMnic Product Specification Silicon PNP Power Transistors 2SB1022 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1417 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 Emi

JMnic Product Specification Silicon PNP Power Transistors 2SB1064 DESCRIPTION With TO-220 package Complement to type 2SD1505 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

JMnic Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin

JMnic Product Specification Silicon PNP Power Transistors 2SB1021 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1416 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 Emi

JMnic Product Specification Silicon PNP Power Transistors 2SB1054 DESCRIPTION With TO-3PFa package Complement to type 2SD1485 High transition frequency Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SB1057 DESCRIPTION With TO-3PFa package Complement to type 2SD1488 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT

JMnic Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION With TO-220Fa package Complement to type 2SD1408 APPLICATIONS For power amplifications Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL

JMnic Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMET

JMnic Product Specification Silicon PNP Power Transistors 2SB1056 DESCRIPTION With TO-3PFa package Complement to type 2SD1487 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT

JMnic Product SpecificationSilicon PNP Power Transistors 2SB1087 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND

JMnic Product Specification Silicon NPN Power Transistors 2SB1037 DESCRIPTION With TO-220 package High allowable collector dissipation. Complement to type 2SD1459 APPLICATIONS For color TV vertical output, sound output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PA

JMnic Product Specification Silicon PNP Power Transistors 2SB1097 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SD1588 APPLICATIONS For low frequency power amplifier and low speed switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

JMnic Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION With TO-220Fa package High breakdown voltage Low collector saturation voltage Complement to type 2SD1407 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Co

JMnic Product Specification Silicon PNP Power Transistors 2SB1020 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1415 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 Emi

JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION With TO-220F package High collector current Low collector saturation voltage Complement to type 2SD1411 APPLICATIONS Power amplifier applications High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 Base

JMnic Product Specification Silicon PNP Power Transistors 2SB1096 DESCRIPTION With TO-220Fa package High breakdown voltage Complement to type 2SD1587 APPLICATIONS For TV vertical output applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

JMnic Product Specification Silicon PNP Power Transistors 2SB1019 DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1412 APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 EmitterAbsolute maximum ratings(Ta=25

JMnic Product SpecificationSilicon PNP Power Transistors 2SB1005 DESCRIPTION With TO-220C package High DC Current Gain DARLINGTON APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Coll

JMnic Product Specification Silicon PNP Power Transistors 2SB1055 DESCRIPTION With TO-3PFa package Complement to type 2SD1486 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT

JMnic Product Specification Silicon PNP Power Transistors 2SB1007 DESCRIPTION With TO-126 package Complement to type 2SD1378 High breakdown voltage APPLICATIONS Low frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Co

2SB1 07 3TRANSISTORFEATURES Low collector-emitter saturation voltage VCE(sat) Large peak collector current IC MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -30 VCollector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -4 A PC Collector Power Dissipation 0.5 W TJ

2SB1073 SOT-89 Transistor(PNP)1. BASE 2. COLLECTOR SOT-891 4.6B4.42 1.63. EMITTER 1.81.41.43 Features 2.64.252.43.75 Low collector-emitter saturation voltage VCE(sat) 0.8MIN0.53Large peak collector current IC 0.400.480.442x)0.13 B0.35 0.371.5MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0Dimensions in inches and (mil

FM120-M WILLAS THRU2SB1073 SOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersTRANSISTOR r reverse leakage current and thermal resistance.(PNP) betteSOD-123HSOT-89 LoFEATURES w profile s

SMD Type TransistorsPNP Transistors2SB1025 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD14180.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Current - Cont

SMD Type TransistorsPNP Transistors2SB1027 Features1.70 0.1 Low frequency power amplifier0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1.5A Collector

SMD Type TransistorsPNP Transistors2SB1070ATO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 Low collector-emitter saturation voltage VCE(sat). High-speed switching.0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

SMD Type TransistorsPNP Transistors2SB1028SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-160V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter - Base Vol

SMD Type TransistorsPNP Transistors2SB1002 Features1.70 0.1 Low frequency power amplifier Complementary to 2SD13680.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -70 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Cont

SMD Type TransistorsPNP Transistors2SB1000 Features1.70 0.1 Low frequency power amplifier Complementary to 2SD13660.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5 Collector Current - Cont

SMD Type TransistorsPNP Transistors2SB1001 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD13670.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - Conti

SMD Type TransistorsPNP Transistors2SB1026 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD14190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter - Base Voltage VEBO -5 Collector Current - Con

SMD Type TransistorsPNP Transistors2SB1070TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 Low collector-emitter saturation voltage VCE(sat). High-speed switching.0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

SMD Type TransistorsPNP Transistors2SB1073 Features1.70 0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VE

isc Silicon PNP Power Transistor 2SB1033DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1437Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MA

isc Silicon PNP Power Transistor 2SB1075DESCRIPTIONHigh Collector Current -I = -2ACCollector-Emitter Breakdown Voltage-: V = -40V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = -1.0V(Max.)@ I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF output amplifier

isc Silicon PNP Power Transistor 2SB1071DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -2ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

isc Silicon PNP Power Transistor 2SB1038DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1310Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MA

isc Silicon PNP Power Transistor 2SB1009DESCRIPTIONHigh Collector Current -I = -2ACCollector-Emitter Breakdown Voltage-: V = -32V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD1380Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applicati

isc Silicon PNP Power Transistor 2SB1094DESCRIPTIONHigh Collector Current:: I = -3ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1585Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIM

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1077DESCRIPTIONSilicon NPN triple diffusedLow Collector-Emitter Saturation VoltageComplement to Type 2SD1558Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifierABSOLUTE MAXIMUM RATINGS (Ta=25)SYMBOL PARAMETER V

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (

isc Silicon PNP Darlington Power Transistor 2SB1024DESCRIPTIONLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -3ACE(sat) CHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -1A)FE CE CComplement to Type 2SD1414Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUT

isc Silicon PNP Power Transistor 2SB1085DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1562Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3

isc Silicon PNP Darlington Power Transistor 2SB1098DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h =2000(Min)@ (V = -2V, I = -3A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow speed switching industrialLow frequency power amplifierABSOLUTE MAXIMUM RATINGS(T

isc Silicon PNP Darlington Power Transistor 2SB1034DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general

isc Silicon PNP Power Transistor 2SB1015DESCRIPTIONLow Collector Saturation Voltage-: V = -1.7 V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1406Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon PNP Darlingtion Power Transistor 2SB1023DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -1AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -2ACE(sat) CGood Linearity of hFEComplement to Type 2SD1413Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applications.Hammer driv

isc Silicon PNP Power Transistor 2SB1063DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max)@I = -3ACE(sat) CGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1499Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon PNP Power Transistor 2SB1052DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max)@I = -2ACE(sat) CGood Linearity of hFEComplement to Type 2SD1480Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

isc Silicon PNP Power Transistor 2SB1086DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1563Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2S

isc Silicon PNP Darlingtion Power Transistor 2SB1022DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1417Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.

isc Silicon PNP Power Transistor 2SB1064DESCRIPTIONLow Collector Saturation Voltage: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1505Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol

isc Silicon PNP Darlingtion Power Transistor 2SB1021DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1416Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.

isc Silicon PNP Power Transistor 2SB1095DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CComplement to Type 2SD1586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIM

isc Silicon PNP Power Transistor 2SB1054DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1485Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon PNP Darlington Power Transistor 2SB1032DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD1436Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMU

isc Silicon PNP Power Transistor 2SB1017DESCRIPTIONLow Collector Saturation Voltage-: V = -1.7V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1408Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 20~25W high-fidelity audio frequencyamplifie

isc Silicon PNP Power Transistor 2SB1065DESCRIPTION Collector Saturation VoltageLow: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1506Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon PNP Darlington Power Transistor 2SB1087DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and low speedswitching applications.ABSOLU

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1079DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -10AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type 2SD1559Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier appl

isc Silicon PNP Power Transistor 2SB1037DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1459Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV vertical output, sound outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

isc Silicon PNP Power Transistor 2SB1097DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CComplement to Type 2SD1588Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low speedswitching applications.ABSOLUTE MAXI

isc Silicon PNP Power Transistor 2SB1089DESCRIPTIONHigh Collector Current:: I = -3ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1567Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIM

isc Silicon PNP Darlington Power Transistor 2SB1031DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -8AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type 2SD1435Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIM

isc Silicon PNP Power Transistor 2SB1016DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0 V(Max)@I = -4ACE(sat) CGood Linearity of hFEComplement to Type 2SD1407Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon PNP Darlingtion Power Transistor 2SB1020DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1415Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.

isc Silicon PNP Power Transistor 2SB1069DESCRIPTIONLow Collector Saturation Voltage: V = -0.5V(Max)@I = -2ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

isc Silicon PNP Power Transistor 2SB1018DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -4ACE(sat) CHigh Current Capability- I = -7ACComplement to Type 2SD1411Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATINGS(

isc Silicon PNP Power Transistor 2SB1096DESCRIPTIONHigh Collector Current:: I = -2ACGood Linearity of hFEComplement to Type 2SD1587Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon PNP Power Transistor 2SB1019DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -4ACE(sat) CGood Linearity of hFEComplement to Type 2SD1412Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon PNP Power Transistor 2SB1018ADESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -4ACE(sat) CHigh Current Capability- I = -7ACComplement to Type 2SD1411AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATING

isc Silicon PNP Power Transistor 2SB1090DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CComplement to Type 2SD1568Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIM

isc Silicon PNP Darlington Power Transistor 2SB1005DESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)With TO-220C packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applicationsABSOLUTE MAXIMUM RA

isc Silicon PNP Power Transistor 2SB1007DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1378Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA