2SB1048 Specs and Replacement
Type Designator: 2SB1048
SMD Transistor Code: BT
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 5000
Package: SOT89
2SB1048 Substitution
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2SB1048 datasheet
2SB1048 Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline UPAK 1 2 2,4 3 1 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SB1048 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 1 A ... See More ⇒
SMD Type Transistors PNP Transistors 2SB1048 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-60V High gain amplifier 0.42 0.1 0.46 0.1 C 1.Base 2.Collector B 3.Emitter E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage V... See More ⇒
SMD Type Transistors PNP Transistors 2SB1046 SOT-89 Unit mm Features 1.70 0.1 Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-160V Complementary to 2SD1464 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage V... See More ⇒
Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD1423 and 2SD1423A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SB1030 30 VCBO V 1 2 3 base voltage 2SB1030A 60 Co... See More ⇒
2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit mm Low collector saturation voltage VCE (sat) = -1.7 V (max) (I = -3 A, I = -0.3 A) C B Collector power dissipation P = 25 W (Tc = 25 C) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -60... See More ⇒
2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power) 2SB1020A High-Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) (VCE = -3 V, IC = -3 A) Low saturation voltage VCE (sat) = -1.5 V (max) (IC = -3 A) Complementary to 2SD1415A Absolute Maximum Ratings (Tc = 25 C) ... See More ⇒
Ordering number EN1256C PNP/NPN Planar Silicon Transistors 2SB1037/2SD1459 Color TV Vertical Output, Sound Output Applications Features Package Dimensions High allowable collector dissipation (PC=2W). unit mm Wide ASO. 2010C [2SB1037/2SD1459] JEDEC TO-220AB 1 Base ( ) 2SB1037 EIAJ SC-46 2 Collector 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25... See More ⇒
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
DATA SHEET SILICON POWER TRANSISTOR 2SB1094 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIER FEATURES PACKAGE DRAWING (UNIT mm) The 2SB1094 features ratings covering a wide range of applications and is ideal for power supplies or a variety of drives in audio and other equipment. VCEO -60 V, VEBO -7.0 V, IC(DC) -3.0 A Mold package that does not r... See More ⇒
DATA SHEET SILICON POWER TRANSISTOR 2SB1097 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Mold package that does not require an insulating board or insulation bushing Large current capacity in small dimension IC(DC) = 7 A Low collector saturation voltage VCE(sat) = -0.5 V MAX. (@ -5 A) ... See More ⇒
MCC Micro Commercial Components TM 2SB1073-Q 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB1073-R Phone (818) 701-4933 Fax (818) 701-4939 Features Low collector to emitter saturation voltage VCE(sat) Silicon Large peak collector current ICP PNP epitaxial planer Mini power type package Lead Free Finish/RoHS Compliant ("P" Suffix desi... See More ⇒
Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD1423 and 2SD1423A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SB1030 30 VCBO V 1 2 3 base voltage 2SB1030A 60 Co... See More ⇒
Power Transistors 2SB1071, 2SB1071A Silicon PNP epitaxial planar type For low-voltage switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector-emitter saturation voltage VCE(sat) 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings TC = 25 C 1.3 0.2 1.4 0.1 Pa... See More ⇒
Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification Unit mm 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Absolute Maximu... See More ⇒
Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD1423 and 2SD1423A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SB1030 30 VCBO V 1 2 3 base voltage 2SB1030A 60 Co... See More ⇒
Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolut... See More ⇒
Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Unit mm 15.0 0.3 5.0 0.2 Complementary to 2SD1485 11.0 0.2 (3.2) Features 3.2 0.1 Excellent collector current IC characteristics of forward current transfer ratio hFE Wide safe operation area High transition frequency fT 2.0 0.2 2.0 0.1 Full-pack package wh... See More ⇒
Transistor 2SB1036 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V 1.27 1.27 Collector to emitter voltag... See More ⇒
Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4... See More ⇒
Power Transistors 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching Unit mm 8.5 0.2 3.4 0.3 6.0 0.2 1.0 0.1 Features Low collector-emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the 0 to 0.4 printed circuit board, etc. of small electronic equipment R = 0.5 0.... See More ⇒
Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolut... See More ⇒
Transistor 2SB1036 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V 1.27 1.27 Collector to emitter voltag... See More ⇒
Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1017L-... See More ⇒
2SB1025 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1418 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1025 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V ... See More ⇒
2SB1027 Silicon PNP Epitaxial Application Low frequency amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1027 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Collector current IC 1.5 A Collector peak... See More ⇒
2SB1059 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1490 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1059 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6 V Collector current IC ... See More ⇒
2SB1091 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 3.5 k 2 3 (Typ) 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 8 A Col... See More ⇒
2SB1028 Silicon PNP Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1028 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5 V Collector current IC 1.5 A Collecto... See More ⇒
2SB1032(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1436(K) Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1.0 k 200 (Typ) (Typ) 1 3 2 3 2SB1032(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base ... See More ⇒
2SB1002 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1368 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1002 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6 V ... See More ⇒
2SB1078(K) PCB 24 2SB1078(K) Silicon PNP Epitaxial Application Low frequency power amplifier Outline Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 8 A Collector ... See More ⇒
2SB1079 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1559 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 k 400 (Typ) (Typ) 1 3 2 3 2SB1079 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base ... See More ⇒
2SB1001 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1367 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1001 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6 V ... See More ⇒
2SB1026 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1419 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1026 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5 V... See More ⇒
2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 5 k 1 k 2 3 (Typ) (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base... See More ⇒
2SB1072(L), 2SB1072(S) Silicon PNP Triple Diffused Application Medium speed power amplifier Outline DPAK 4 2, 4 4 1 1 2 ID 1. Base 3 2. Collector 3. Emitter S Type 12 3 k 0.4 k 4. Collector 3 (Typ) (Typ) L Type 3 2SB1072(L), 2SB1072(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter volt... See More ⇒
2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Low Collector Saturation Voltage High DC Current Gain Emitter Collector High Collector Power Dissipation Base J Complementary of the 2SD1513 A D Millimeter REF. Min... See More ⇒
2SB1033 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD1437 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 40 W Ju... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1073 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Large peak collector current IC 2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 Symbol Parameter Value Unit VCBO -30 V Collector-Base V... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1033 DESCRIPTION With TO-220 package Complement to type 2SD1437 APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1075 DESCRIPTION With TO-126 package High collector-peak current Low collector saturation voltage APPLICATIONS For audio frequency output amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER ... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1009 DESCRIPTION With TO-126 package Complement to type 2SD1380 APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collec... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1094 DESCRIPTION With TO-220Fa package Complement to type 2SD1585 APPLICATIONS Ideal for power supplies or variety or in audio and other equipment PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage ... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbo... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1024 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1414 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbo... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1085 DESCRIPTION With TO-220 package Complement to type 2SD1562 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol ... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute ma... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1098 DESCRIPTION With TO-220F package Complement to type 2SD1589 DARLINGTON High DC current gain APPLICATIONS Low speed switching industrial use Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base Absolute maximum ratin... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1034 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain DARLINGTON APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS V... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION With TO-220Fa package Collector power dissipation PC=25W@TC=25 Low collector saturation voltage Complement to type 2SD1406 APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) ... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1023 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1413 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbo... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1063 DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-b... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1052 DESCRIPTION With TO-220Fa package Complement to type 2SD1480 Low collector saturation voltage APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage ... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1086 DESCRIPTION With TO-126 package Complement to type 2SD1563 Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maxi... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB1071 -40 VCBO C... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1022 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1417 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emi... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1064 DESCRIPTION With TO-220 package Complement to type 2SD1505 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratin... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1021 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1416 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emi... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1054 DESCRIPTION With TO-3PFa package Complement to type 2SD1485 High transition frequency Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1057 DESCRIPTION With TO-3PFa package Complement to type 2SD1488 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION With TO-220Fa package Complement to type 2SD1408 APPLICATIONS For power amplifications Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1056 DESCRIPTION With TO-3PFa package Complement to type 2SD1487 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1087 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER COND... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SB1037 DESCRIPTION With TO-220 package High allowable collector dissipation. Complement to type 2SD1459 APPLICATIONS For color TV vertical output, sound output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PA... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1097 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SD1588 APPLICATIONS For low frequency power amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION With TO-220Fa package High breakdown voltage Low collector saturation voltage Complement to type 2SD1407 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1020 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1415 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emi... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION With TO-220F package High collector current Low collector saturation voltage Complement to type 2SD1411 APPLICATIONS Power amplifier applications High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1096 DESCRIPTION With TO-220Fa package High breakdown voltage Complement to type 2SD1587 APPLICATIONS For TV vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1005 DESCRIPTION With TO-220C package High DC Current Gain DARLINGTON APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1055 DESCRIPTION With TO-3PFa package Complement to type 2SD1486 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1007 DESCRIPTION With TO-126 package Complement to type 2SD1378 High breakdown voltage APPLICATIONS Low frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co... See More ⇒
2SB1 07 3 TRANSISTOR FEATURES Low collector-emitter saturation voltage VCE(sat) Large peak collector current IC MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -30 V Collector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -4 A PC Collector Power Dissipation 0.5 W TJ ... See More ⇒
2SB1073 SOT-89 Transistor(PNP) 1. BASE 2. COLLECTOR SOT-89 1 4.6 B 4.4 2 1.6 3. EMITTER 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 Low collector-emitter saturation voltage VCE(sat) 0.8 MIN 0.53 Large peak collector current IC 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0 Dimensions in inches and (mil... See More ⇒
FM120-M WILLAS THRU 2SB1073 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers TRANSISTOR r reverse leakage current and thermal resistance. (PNP) bette SOD-123H SOT-89 Lo FEATURES w profile s... See More ⇒
SMD Type Transistors PNP Transistors 2SB1025 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1418 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Current - Cont... See More ⇒
SMD Type Transistors PNP Transistors 2SB1027 Features 1.70 0.1 Low frequency power amplifier 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1.5 A Collector... See More ⇒
SMD Type Transistors PNP Transistors 2SB1070A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector-emitter saturation voltage VCE(sat). High-speed switching. 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin... See More ⇒
SMD Type Transistors PNP Transistors 2SB1028 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-160V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter - Base Vol... See More ⇒
SMD Type Transistors PNP Transistors 2SB1002 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1368 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -70 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Cont... See More ⇒
SMD Type Transistors PNP Transistors 2SB1000 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1366 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5 Collector Current - Cont... See More ⇒
SMD Type Transistors PNP Transistors 2SB1001 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1367 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - Conti... See More ⇒
SMD Type Transistors PNP Transistors 2SB1026 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1419 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter - Base Voltage VEBO -5 Collector Current - Con... See More ⇒
SMD Type Transistors PNP Transistors 2SB1070 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector-emitter saturation voltage VCE(sat). High-speed switching. 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating... See More ⇒
SMD Type Transistors PNP Transistors 2SB1073 Features 1.70 0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VE... See More ⇒
isc Silicon PNP Power Transistor 2SB1033 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1437 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MA... See More ⇒
isc Silicon PNP Power Transistor 2SB1075 DESCRIPTION High Collector Current -I = -2A C Collector-Emitter Breakdown Voltage- V = -40V(Min.) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage V = -1.0V(Max.)@ I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF output amplifier... See More ⇒
isc Silicon PNP Power Transistor 2SB1071 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -2A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
isc Silicon PNP Power Transistor 2SB1038 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1310 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MA... See More ⇒
isc Silicon PNP Power Transistor 2SB1009 DESCRIPTION High Collector Current -I = -2A C Collector-Emitter Breakdown Voltage- V = -32V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD1380 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applicati... See More ⇒
isc Silicon PNP Power Transistor 2SB1094 DESCRIPTION High Collector Current I = -3A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1585 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1077 DESCRIPTION Silicon NPN triple diffused Low Collector-Emitter Saturation Voltage Complement to Type 2SD1558 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER V... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1024 DESCRIPTION Low Collector Saturation Voltage- V = -1.5V(Max.)@ I = -3A CE(sat) C High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -1A) FE CE C Complement to Type 2SD1414 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUT... See More ⇒
isc Silicon PNP Power Transistor 2SB1085 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1562 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 ... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1098 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h =2000(Min)@ (V = -2V, I = -3A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low speed switching industrial Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1034 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -1A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general... See More ⇒
isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION Low Collector Saturation Voltage- V = -1.7 V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1406 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
isc Silicon PNP Darlingtion Power Transistor 2SB1023 DESCRIPTION High DC C urrent Gain- h = 2000(Min.)@I = -1A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -2A CE(sat) C Good Linearity of h FE Complement to Type 2SD1413 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications. Hammer driv... See More ⇒
isc Silicon PNP Power Transistor 2SB1063 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Max)@I = -3A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1499 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
isc Silicon PNP Power Transistor 2SB1052 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Max)@I = -2A CE(sat) C Good Linearity of h FE Complement to Type 2SD1480 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
isc Silicon PNP Power Transistor 2SB1086 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1563 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2S... See More ⇒
isc Silicon PNP Darlingtion Power Transistor 2SB1022 DESCRIPTION High DC C urrent Gain- h = 2000(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1417 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. ... See More ⇒
isc Silicon PNP Power Transistor 2SB1064 DESCRIPTION Low Collector Saturation Voltage V = -1.0V(Max)@I = -2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1505 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absol... See More ⇒
isc Silicon PNP Darlingtion Power Transistor 2SB1021 DESCRIPTION High DC C urrent Gain- h = 2000(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1416 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. ... See More ⇒
isc Silicon PNP Power Transistor 2SB1095 DESCRIPTION High Collector Current I = -4A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Complement to Type 2SD1586 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM... See More ⇒
isc Silicon PNP Power Transistor 2SB1054 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1485 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1032 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD1436 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMU... See More ⇒
isc Silicon PNP Power Transistor 2SB1017 DESCRIPTION Low Collector Saturation Voltage- V = -1.7V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1408 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 20 25W high-fidelity audio frequency amplifie... See More ⇒
isc Silicon PNP Power Transistor 2SB1065 DESCRIPTION Collector Saturation Voltage Low V = -1.0V(Max)@I = -2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1506 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1087 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and low speed switching applications. ABSOLU... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1079 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -10A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type 2SD1559 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier appl... See More ⇒
isc Silicon PNP Power Transistor 2SB1037 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1459 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV vertical output, sound output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
isc Silicon PNP Power Transistor 2SB1097 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -5A CE(sat) C Complement to Type 2SD1588 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low speed switching applications. ABSOLUTE MAXI... See More ⇒
isc Silicon PNP Power Transistor 2SB1089 DESCRIPTION High Collector Current I = -3A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1567 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1031 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -8A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type 2SD1435 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIM... See More ⇒
isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION Low Collector Saturation Voltage- V = -2.0 V(Max)@I = -4A CE(sat) C Good Linearity of h FE Complement to Type 2SD1407 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
isc Silicon PNP Darlingtion Power Transistor 2SB1020 DESCRIPTION High DC C urrent Gain- h = 2000(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1415 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. ... See More ⇒
isc Silicon PNP Power Transistor 2SB1069 DESCRIPTION Low Collector Saturation Voltage V = -0.5V(Max)@I = -2A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage... See More ⇒
isc Silicon PNP Power Transistor 2SB1018 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -4A CE(sat) C High Current Capability- I = -7A C Complement to Type 2SD1411 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(... See More ⇒
isc Silicon PNP Power Transistor 2SB1096 DESCRIPTION High Collector Current I = -2A C Good Linearity of h FE Complement to Type 2SD1587 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
isc Silicon PNP Power Transistor 2SB1019 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max)@I = -4A CE(sat) C Good Linearity of h FE Complement to Type 2SD1412 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -4A CE(sat) C High Current Capability- I = -7A C Complement to Type 2SD1411A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATING... See More ⇒
isc Silicon PNP Power Transistor 2SB1090 DESCRIPTION High Collector Current I = -4A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Complement to Type 2SD1568 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1005 DESCRIPTION High DC Current Gain- h = 750(Min)@ I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) With TO-220C package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications ABSOLUTE MAXIMUM RA... See More ⇒
isc Silicon PNP Power Transistor 2SB1007 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1378 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒
Detailed specifications: 2SB1040, 2SB1041, 2SB1042, 2SB1043, 2SB1044, 2SB1045, 2SB1046, 2SB1047, A1013, 2SB1049, 2SB105, 2SB1050, 2SB1051, 2SB1052, 2SB1053, 2SB1054, 2SB1055
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