All Transistors. 2SB1058 Datasheet

 

2SB1058 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1058
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92

 2SB1058 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1058 Datasheet (PDF)

 ..1. Size:119K  hitachi
2sb1058.pdf

2SB1058

 8.1. Size:37K  panasonic
2sb1050.pdf

2SB1058
2SB1058

Transistor2SB1050Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Low collector to emitter saturation voltage VCE(sat).Large collector current IC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolut

 8.2. Size:89K  panasonic
2sb1054.pdf

2SB1058
2SB1058

Power Transistors2SB1054Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mm15.00.3 5.00.2Complementary to 2SD148511.00.2 (3.2) Features 3.20.1 Excellent collector current IC characteristics of forward currenttransfer ratio hFE Wide safe operation area High transition frequency fT 2.00.2 2.00.1 Full-pack package wh

 8.3. Size:41K  panasonic
2sb1050 e.pdf

2SB1058
2SB1058

Transistor2SB1050Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Low collector to emitter saturation voltage VCE(sat).Large collector current IC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolut

 8.4. Size:17K  hitachi
2sb1059.pdf

2SB1058
2SB1058

2SB1059Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1490OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SB1059Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6 VCollector current IC

 8.5. Size:164K  jmnic
2sb1052.pdf

2SB1058
2SB1058

JMnic Product Specification Silicon PNP Power Transistors 2SB1052 DESCRIPTION With TO-220Fa package Complement to type 2SD1480 Low collector saturation voltage APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

 8.6. Size:161K  jmnic
2sb1054.pdf

2SB1058
2SB1058

JMnic Product Specification Silicon PNP Power Transistors 2SB1054 DESCRIPTION With TO-3PFa package Complement to type 2SD1485 High transition frequency Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.7. Size:160K  jmnic
2sb1057.pdf

2SB1058
2SB1058

JMnic Product Specification Silicon PNP Power Transistors 2SB1057 DESCRIPTION With TO-3PFa package Complement to type 2SD1488 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT

 8.8. Size:163K  jmnic
2sb1056.pdf

2SB1058
2SB1058

JMnic Product Specification Silicon PNP Power Transistors 2SB1056 DESCRIPTION With TO-3PFa package Complement to type 2SD1487 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT

 8.9. Size:214K  jmnic
2sb1055.pdf

2SB1058
2SB1058

JMnic Product Specification Silicon PNP Power Transistors 2SB1055 DESCRIPTION With TO-3PFa package Complement to type 2SD1486 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT

 8.10. Size:217K  inchange semiconductor
2sb1052.pdf

2SB1058
2SB1058

isc Silicon PNP Power Transistor 2SB1052DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max)@I = -2ACE(sat) CGood Linearity of hFEComplement to Type 2SD1480Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 8.11. Size:217K  inchange semiconductor
2sb1054.pdf

2SB1058
2SB1058

isc Silicon PNP Power Transistor 2SB1054DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1485Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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