All Transistors. 2SB1097 Datasheet

 

2SB1097 Datasheet and Replacement


   Type Designator: 2SB1097
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220
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2SB1097 Datasheet (PDF)

 ..1. Size:135K  nec
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2SB1097

DATA SHEETSILICON POWER TRANSISTOR2SB1097PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Mold package that does not require an insulating board orinsulation bushing Large current capacity in small dimension: IC(DC) = 7 A Low collector saturation voltage: VCE(sat) = -0.5 V MAX. (@ -5 A)

 ..2. Size:159K  jmnic
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2SB1097

JMnic Product Specification Silicon PNP Power Transistors 2SB1097 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SD1588 APPLICATIONS For low frequency power amplifier and low speed switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

 ..3. Size:217K  inchange semiconductor
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2SB1097

isc Silicon PNP Power Transistor 2SB1097DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CComplement to Type 2SD1588Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low speedswitching applications.ABSOLUTE MAXI

 8.1. Size:125K  nec
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2SB1097

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: GT322E | KTC2553 | 2T916A | 2SD1731 | KSY63 | MP3904R | SMBT3904UPN

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