2SB1119U Specs and Replacement
Type Designator: 2SB1119U
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 280
Package: SOT89
2SB1119U Substitution
- BJT ⓘ Cross-Reference Search
2SB1119U datasheet
2SB1119/2SD1619 PNP Silicon Elektronische Bauelemente Medium Power Transistor RoHS Compliant Product D D1 A SOT-89 b1 FEATURES b Power dissipation C e e1 P 500mW Tamb=25 CM 1.BASE Collector current 2.COLLECTOR Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max -1 A ICM 3.EMITTER A 1.400 1.600 0.055 0.063 Collector-base vol... See More ⇒
2SB1 1 1 9 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Small Flat Package LF Amplifier, Electronic Governor Applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power ... See More ⇒
SMD Type Transistors PNP Transistors 2SB1119 Features 1.70 0.1 Very small size making it easy to provide high highdensity, small-sized hybrid IC s. Complementary to 2SD1619 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -25 V ... See More ⇒
Detailed specifications: 2SB1118, 2SB1118S, 2SB1118T, 2SB1118U, 2SB1119, 2SB1119R, 2SB1119S, 2SB1119T, C3198, 2SB112, 2SB1120, 2SB1120E, 2SB1120F, 2SB1120G, 2SB1121, 2SB1121R, 2SB1121S
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