All Transistors. 2SB1121R Datasheet

 

2SB1121R Datasheet and Replacement


   Type Designator: 2SB1121R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 32 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89
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2SB1121R Datasheet (PDF)

 7.1. Size:297K  sanyo
 2sb1121.pdf pdf_icon

2SB1121R

Ordering number : EN1787B2SB1121 / 2SD1621SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB1121 / 2SD1621High-Current Driver ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity

 7.2. Size:187K  onsemi
 2sb1121.pdf pdf_icon

2SB1121R

Ordering number : EN1787C 2SB1121 Bipolar Transistor http://onsemi.com -25V, -2A, Low VCE(sat) PNP Single PCPApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity and wide SOA Fast switching speed Ultrasmall size ma

 7.3. Size:1416K  kexin
 2sb1121.pdf pdf_icon

2SB1121R

SMD Type TransistorsPNP Transistors2SB11211.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed.0.42 0.10.46 0.1 Complementary to 2SD16211.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector -

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History: 2SA893AC | 2N1949 | 2N5811 | BT2944 | CTP3551 | 2N2192L | 2SB47

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