2SB1122S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1122S
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SOT89
2SB1122S Transistor Equivalent Substitute - Cross-Reference Search
2SB1122S Datasheet (PDF)
2sb1122.pdf
Ordering number : EN2040B2SB1122 / 2SD1622SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB1122 / 2SD1622Low-Frequency Power Amplifier ApplicationsApplications Voltage regulators relay drivers, lamp drivers, electrical equipment.Features Adoption of FBET process. Ultrasmall size making it easy to provide high-density hybrid ICs.S
2sb1122.pdf
Ordering number : EN2040C2SB1122Bipolar Transistorhttp://onsemi.com ( )50V, 1A, Low VCE sat PNP Single PCPApplicaitons Voltage regulators relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET process Ultrasmall size making it easy to provide high-density hybrid ICsSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol
2sb1122.pdf
SMD Type ICPNP Transistors2SB1122 Features1.70 0.1 Very small size making it easy to provide high highdensity, small-sized hybrid ICs. Complementary to 2SD16220.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
