2SB1123S Specs and Replacement
Type Designator: 2SB1123S
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 22 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Package: SOT89
2SB1123S Substitution
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2SB1123S datasheet
2SB1123 PNP-Silicon General use Transistors 1W 1.5A 25V 4 2 1 3 Applications Can be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-base voltage IC=0 IC 1.5 A Collect... See More ⇒
Ordering number EN1727E 2SB1123 / 2SD1623 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1123 / 2SD1623 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capaci... See More ⇒
Ordering number EN1727F 2SB1123/2SD1623 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single PCP Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Large current capacity and wide ASO Fast switching sp... See More ⇒
Detailed specifications: 2SB1121U, 2SB1122, 2SB1122R, 2SB1122S, 2SB1122T, 2SB1122U, 2SB1123, 2SB1123R, 2SA1015, 2SB1123T, 2SB1123U, 2SB1124, 2SB1124R, 2SB1124S, 2SB1124T, 2SB1124U, 2SB1125
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