All Transistors. 2SB1133R Datasheet

 

2SB1133R Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1133R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 110 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220F

 2SB1133R Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1133R Datasheet (PDF)

 7.1. Size:30K  sanyo
2sb1133 2sd1666.pdf

2SB1133R
2SB1133R

Ordering number : ENN3031A2SB1133 / 2SD1666PNP / NPN Triple Diffused Planar Silicon Transistors2SB1133 / 2SD1666Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeaturesPackage Dimensions Wide ASO(Adoption of MBIT process).unit : mm Micaless package facilitating easy mounting.2041A High reliability.[2SB1133 / 2SD1666]4.510.02.83.22.41.61.20.7

 7.2. Size:69K  wingshing
2sb1133.pdf

2SB1133R

2SB1133 PNP EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 20 W Junction Tem

 7.3. Size:188K  jmnic
2sb1133.pdf

2SB1133R
2SB1133R

JMnic Product Specification Silicon PNP Power Transistors 2SB1133 DESCRIPTION With TO-220F package Complement to type 2SD1666 Low collector saturation voltage Wide area of safe operation APPLICATIONS For low-frequency and general-purpose amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 Emitter

 7.4. Size:213K  inchange semiconductor
2sb1133.pdf

2SB1133R
2SB1133R

isc Silicon PNP Power Transistor 2SB1133DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1666Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAX

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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