All Transistors. 2SB1136R Datasheet

 

2SB1136R Datasheet and Replacement


   Type Designator: 2SB1136R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220F
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2SB1136R Datasheet (PDF)

 7.1. Size:102K  sanyo
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2SB1136R

 7.2. Size:221K  jmnic
 2sb1136.pdf pdf_icon

2SB1136R

JMnic Product Specification Silicon PNP Power Transistors 2SB1136 DESCRIPTION With TO-220F package Complement to type 2SD1669 Low collector saturation voltage Wide ASO APPLICATIONS Relay drivers High speed inverters,converters General high current switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and

 7.3. Size:199K  inchange semiconductor
 2sb1136.pdf pdf_icon

2SB1136R

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1136DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.4V(Max.)@ I = -6ACE(sat) CComplement to Type 2SD1669Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inver

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC1162WT | 2SB1188SQ-R | CSB737S | DTA144WET1G | 2SD2072 | 3DF5 | 2SD912

Keywords - 2SB1136R transistor datasheet

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