2SB1165R Specs and Replacement
Type Designator: 2SB1165R
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO126
2SB1165R Substitution
- BJT ⓘ Cross-Reference Search
2SB1165R datasheet
JMnic Product Specification Silicon PNP Power Transistors 2SB1165 DESCRIPTION With TO-126 package Complement to type 2SD1722 Low collector saturation voltage Fast switching time APPLICATIONS For use in relay drivers,high-speed inverters,converters. PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings... See More ⇒
isc Silicon PNP Power Transistor 2SB1165 DESCRIPTION Low Collector Saturation Voltage- V = -0.55V(Max)@I = -3A CE(sat) C High f T Good Linearity of h FE Fast switching time Complement to Type 2SD1722 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters and converters applica... See More ⇒
Detailed specifications: 2SB116, 2SB1160, 2SB1161, 2SB1162, 2SB1163, 2SB1164, 2SB1165, 2SB1165Q, 13005, 2SB1165S, 2SB1165T, 2SB1166, 2SB1166Q, 2SB1166R, 2SB1166S, 2SB1166T, 2SB1167
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