All Transistors. 2SB1165R Datasheet

 

2SB1165R Datasheet and Replacement


   Type Designator: 2SB1165R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO126
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2SB1165R Datasheet (PDF)

 7.1. Size:124K  sanyo
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2SB1165R

 7.2. Size:157K  jmnic
 2sb1165.pdf pdf_icon

2SB1165R

JMnic Product Specification Silicon PNP Power Transistors 2SB1165 DESCRIPTION With TO-126 package Complement to type 2SD1722 Low collector saturation voltage Fast switching time APPLICATIONS For use in relay drivers,high-speed inverters,converters. PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings

 7.3. Size:218K  inchange semiconductor
 2sb1165.pdf pdf_icon

2SB1165R

isc Silicon PNP Power Transistor 2SB1165DESCRIPTIONLow Collector Saturation Voltage-: V = -0.55V(Max)@I = -3ACE(sat) CHigh fTGood Linearity of hFEFast switching timeComplement to Type 2SD1722Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters andconverters applica

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | 3DD31CT4 | 2N6448 | KRA741U

Keywords - 2SB1165R transistor datasheet

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