2N1495A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1495A
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO5
2N1495A Transistor Equivalent Substitute - Cross-Reference Search
2N1495A Datasheet (PDF)
9.5. Size:52K microsemi
2n1487 2n1488 2n1489 2n1490.pdf
2n1487 2n1488 2n1489 2n1490.pdf
TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/208 Devices Qualified Level 2N1487 2N1488 2N1489 2N1490 MAXIMUM RATINGS Ratings Symbol 2N1487 2N1488 Unit 2N1498 2N1490 Collector-Emitter Voltage 40 55 Vdc VCEO Collector-Base Voltage 60 100 Vdc VCBO Collector-Emitter Voltage 60 100 Vdc VCEX Emitter-Base Voltage 10 Vdc VEBO Base Current
Datasheet: 2N149 , 2N1490 , 2N1491 , 2N1492 , 2N1493 , 2N1494 , 2N1494A , 2N1495 , B772 , 2N1496 , 2N1497 , 2N1499 , 2N1499A , 2N1499B , 2N149A , 2N150 , 2N1500 .
