All Transistors. 2SB1165S Datasheet

 

2SB1165S Datasheet and Replacement


   Type Designator: 2SB1165S
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO126
 

 2SB1165S Substitution

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2SB1165S Datasheet (PDF)

 7.1. Size:124K  sanyo
 2sb1165.pdf pdf_icon

2SB1165S

 7.2. Size:157K  jmnic
 2sb1165.pdf pdf_icon

2SB1165S

JMnic Product Specification Silicon PNP Power Transistors 2SB1165 DESCRIPTION With TO-126 package Complement to type 2SD1722 Low collector saturation voltage Fast switching time APPLICATIONS For use in relay drivers,high-speed inverters,converters. PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings

 7.3. Size:218K  inchange semiconductor
 2sb1165.pdf pdf_icon

2SB1165S

isc Silicon PNP Power Transistor 2SB1165DESCRIPTIONLow Collector Saturation Voltage-: V = -0.55V(Max)@I = -3ACE(sat) CHigh fTGood Linearity of hFEFast switching timeComplement to Type 2SD1722Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters andconverters applica

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Datasheet: 2SB1160 , 2SB1161 , 2SB1162 , 2SB1163 , 2SB1164 , 2SB1165 , 2SB1165Q , 2SB1165R , BC556 , 2SB1165T , 2SB1166 , 2SB1166Q , 2SB1166R , 2SB1166S , 2SB1166T , 2SB1167 , 2SB1167Q .

Keywords - 2SB1165S transistor datasheet

 2SB1165S cross reference
 2SB1165S equivalent finder
 2SB1165S lookup
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 2SB1165S replacement

 

 
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