2SB1167Q Specs and Replacement
Type Designator: 2SB1167Q
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO126
- BJT ⓘ Cross-Reference Search
2SB1167Q datasheet
8.4. Size:84K panasonic
2sb1169.pdf 
Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit mm Features 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 High forward current transfer ratio hFE which has satisfactory linearity 2.0 0.2 Low collector-emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circu... See More ⇒
8.5. Size:159K jmnic
2sb1161.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1161 DESCRIPTION With TO-3PFa package Complement to type 2SD1716 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-ba... See More ⇒
8.6. Size:155K jmnic
2sb1162.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1162 DESCRIPTION With TO-3PL package Complement to type 2SD1717 Excellent linearity of hFE Wide area of safe operation (ASO) High transition frequency fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified o... See More ⇒
8.7. Size:155K jmnic
2sb1163.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1163 DESCRIPTION With TO-3PL package Complement to type 2SD1718 Excellent linearity of hFE Wide area of safe operation (ASO) High transition frequency fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified o... See More ⇒
8.8. Size:157K jmnic
2sb1165.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1165 DESCRIPTION With TO-126 package Complement to type 2SD1722 Low collector saturation voltage Fast switching time APPLICATIONS For use in relay drivers,high-speed inverters,converters. PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings... See More ⇒
8.9. Size:187K jmnic
2sb1160.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION With TO-3PFa package Complement to type 2SD1715 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT... See More ⇒
8.10. Size:1188K kexin
2sb1169.pdf
SMD Type Transistors PNP Transistors 2SB1169 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 -0.7 -0.2 +0.8 Features High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) 0.127 0.80+0.1 max -0.1 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Max... See More ⇒
8.11. Size:1186K kexin
2sb1169a.pdf
SMD Type Transistors PNP Transistors 2SB1169A TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 -0.7 -0.2 +0.8 Features High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) 0.127 0.80+0.1 max -0.1 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Ma... See More ⇒
8.12. Size:222K inchange semiconductor
2sb1161.pdf
isc Silicon PNP Power Transistor 2SB1161 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1716 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
8.13. Size:218K inchange semiconductor
2sb1168.pdf
isc Silicon PNP Power Transistor 2SB1168 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -2A CE(sat) C High f T Good Linearity of h FE Fast switching time Complement to Type 2SD1725 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters and converters applicat... See More ⇒
8.14. Size:219K inchange semiconductor
2sb1162.pdf
isc Silicon PNP Power Transistor 2SB1162 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1717 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
8.15. Size:219K inchange semiconductor
2sb1163.pdf
isc Silicon PNP Power Transistor 2SB1163 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1718 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
8.16. Size:218K inchange semiconductor
2sb1165.pdf
isc Silicon PNP Power Transistor 2SB1165 DESCRIPTION Low Collector Saturation Voltage- V = -0.55V(Max)@I = -3A CE(sat) C High f T Good Linearity of h FE Fast switching time Complement to Type 2SD1722 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters and converters applica... See More ⇒
8.17. Size:222K inchange semiconductor
2sb1160.pdf
isc Silicon PNP Power Transistor 2SB1160 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1715 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
Detailed specifications: 2SB1165S, 2SB1165T, 2SB1166, 2SB1166Q, 2SB1166R, 2SB1166S, 2SB1166T, 2SB1167, BC549, 2SB1167R, 2SB1167S, 2SB1167T, 2SB1168, 2SB1168Q, 2SB1168R, 2SB1168S, 2SB1168T
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